TSM3443 20V P-Channel MOSFET Pin Definition: SOT-26 PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain V (V) R (m) I (A) DS DSON D 3. Gate 4. Source 60 VGS = -4.5V -4.7 20 100 VGS = -2.5V -3.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design fPor Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM3443CX6 RFG SOT-26 3Kpcs / 7 Reel P-Channel MOSFET Note: G denote for Halogen Free Product Absolute Maximum Rating (T =25C unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V -20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current, V 4.5V. I -4.7 A GS D Pulsed Drain Current, V 4.5V I -20 A GS DM a,b Continuous Source Current (Diode Conduction) I -1.7 A S T =25C 2 A Maximum Power Dissipation P W D T =70C 1.3 A Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance R 30 C/W JC Junction to Ambient Thermal Resistance (PCB mounted) R 80 C/W JA Note 1: Pulse width limited by the Maximum junction temperature Note 2: Surface Mounted on FR4 Board, t 5 sec Document Number: DS P0000077 1 Version: F15 TSM3443 20V P-Channel MOSFET Electrical Specifications (T = 25C unless otherwise noted) A Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = -250uA BV -20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = -250A V -0.5 -- -1.4 V DS GS D GS(TH) Gate Body Leakage V = 12V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = -20V, V = 0V I -- -- -1.0 A DS GS DSS a On-State Drain Current V =-5V, V = -4.5V I -15 -- -- A DS GS D(ON) V = -4.5V, I = -4.7A -- 48 60 GS D a Drain-Source On-State Resistance R m DS(ON) V = -2.5V, I = -3.8A -- 80 100 GS D a Forward Transconductance V = -10V, I = -4.7A g -- 11 -- S DS D fs Diode Forward Voltage I = -1.7A, V = 0V V -- -0.8 -1.2 V S GS SD 2 Dynamic Total Gate Charge Q -- 6 9 g V = -10V, I = -4.7A, DS D nC Gate-Source Charge Q -- 1.4 -- gs V = -4.5V GS Gate-Drain Charge Q -- 1.9 -- gd Input Capacitance C -- 640 -- iss V = -10V, V = 0V, DS GS pF Output Capacitance C -- 180 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 90 -- rss 3 Switching Turn-On Delay Time t -- 22 35 d(on) V = -10V, R = 10, DD L Turn-On Rise Time t -- 35 55 r I = -1A, V = -4.5V, nS D GEN Turn-Off Delay Time t -- 45 70 d(off) R = 6 G Turn-Off Fall Time t -- 25 50 f Note 1: Pulse test: P 300S, duty cycle 2% W Note 2: For DESIGN AID ONLY, not subject to production testing. Note 3: Switching time is essentially independent of operating temperature. Document Number: DS P0000077 2 Version: F15