STL50N6F7 STMicroelectronics

STL50N6F7 N-channel 60 V, 9 m typ., 60 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max. DS DS(on) ID STL50N6F7 60 V 11 m 60 A Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Figure 1: Internal schematic diagram Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging TM STL50N6F7 50N6F7 PowerFLAT 5x6 Tape and reel November 2015 DocID028126 Rev 2 1/14 www.st.com This is information on a product in full production. Contents STL50N6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package mechanical data ............................................................... 8 4.1 PowerFLAT 5x6 type R package information .................................... 9 4.2 Packing information ......................................................................... 11 5 Revision history ............................................................................ 13 2/14 DocID028126 Rev 2