Green DMNH6021SK3Q 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature I max D BV R max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switch (UIS) Test in Production 23m V = 10V 50A GS 60V Low On-Resistance 28m V = 4.5V 45A GS Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported up by a PPAP and is ideal for use in: Mechanical Data Case: TO252 (DPAK) Power Management Case Material: Molded Plastic, Green Molding Compound. Driving Solenoids UL Flammability Classification Rating 94V-0 Motor Control Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.33 grams (Approximate) D D G S Top View Pin Out Top View Equivalent Circuit Ordering Information (Notes 4 & 5) Part Number Case Packaging DMNH6021SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMNH6021SK3Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 50 C Continuous Drain Current (Note 8) V = 10V I A GS D 35 T = +100C C Pulsed Drain Current (10s pulse, duty cycle = 1%) 80 A I DM Maximum Body Diode Forward Current (Note 8) 40 A I S Avalanche Current, L = 0.1mH (Note 9) A I AS Avalanche Energy, L = 0.1mH (Note 9) 64 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 2.1 W D Thermal Resistance, Junction to Ambient (Note 6) Steady State 73 C/W R JA Total Power Dissipation (Note 7) 3.7 W P D Thermal Resistance, Junction to Ambient (Note 7) Steady State 40 R JA C/W Thermal Resistance, Junction to Case (Note 8) R 1.8 JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage 60 - - V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current - - 1 A I V = 60V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage V 1 - 3 V V = V , I = 250A GS(TH) DS GS D - 13 23 V = 10V, I = 12A GS D Static Drain-Source On-Resistance m R DS(ON) - 18 28 V = 4.5V, I = 12A GS D Diode Forward Voltage V - 0.75 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 11) 1143 Input Capacitance C - - pF iss V = 25V, V = 0V, DS GS 168 Output Capacitance - - pF C oss f = 1MHz Reverse Transfer Capacitance - 69 - pF C rss Gate Resistance - 2.5 - R V = 0V, V = 0V, f = 1MHz g DS GS - 20.1 - nC Total Gate Charge (V = 10V) Q GS g - 12.1 - nC Total Gate Charge (V = 4.5V) Q GS g V = 30V, I = 20A DS D Gate-Source Charge - 4.3 - nC Q gs 5.5 Gate-Drain Charge Q - - nC gd 4.4 Turn-On Delay Time t - - ns D(ON) 6.0 Turn-On Rise Time t - - ns R V = 30V, V = 10V, DD GS 14.2 Turn-Off Delay Time t - - ns R = 4.7, I = 10A D(OFF) G D 5.4 Turn-Off Fall Time - - ns tF Reverse Recovery Time - 21.2 - ns t RR I = 20A, di/dt = 100A/s F Reverse Recovery Charge - 15.2 - nC Q RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 7 DMNH6021SK3Q June 2016 Diodes Incorporated www.diodes.com Document number: DS38701 Rev. 3 - 2