DMT3020LDV DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UXC) Product Summary Features Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance T = +25C C Fast Switching Speed 20m V = 10V 32A GS Low Input/Output Leakage 30V 32m V = 4.5V 25A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: PowerDI 3333-8 (Type UXC) resistance (RDS(ON)), yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound. making it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Applications Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 Analog Switch Weight: 0.072 grams (Approximate) PowerDI3333-8 (Type UXC) D1 D1 D1 D2 D2 G1 S1 G1 S2 G2 Pin 1 S1 Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMT3020LDV-7 PowerDI3333-8 (Type UXC) 2,000/Tape & Reel DMT3020LDV-13 PowerDI3333-8 (Type UXC) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT3020LDV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 32 C Continuous Drain Current, V = 10V (Note 7) I A GS D State 25 T = +70C C Maximum Body Diode Forward Current (Note 7) 25 A IS Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 50 A I DM Pulsed Drain Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 50 A I SM Avalanche Current (L = 0.1mH) (Note 8) 13 A I AS Avalanche Energy (L = 0.1mH) (Note 8) 8.5 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.9 W P D Steady State Thermal Resistance, Junction to Ambient (Note 5) 138 C/W R JA Total Power Dissipation (Note 6) 1.9 W P D Steady State Thermal Resistance, Junction to Ambient (Note 6) 67 R JA C/W Thermal Resistance, Junction to Case (Note 7) 4.8 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 30.0 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 24V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 1.0 2.5 V V V = V , I = 250A GS(TH) DS GS D 14 20 V = 10V, I = 9.0A GS D Static Drain-Source On-Resistance R m DS(ON) 22 32 V = 4.5V, I = 7.0A GS D Diode Forward Voltage 8.0 1.2 V V V = 0V, I = 2A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 393 pF iss V = 15V, V = 0V, DS GS 173 Output Capacitance C pF oss f = 1.0MHz 27 Reverse Transfer Capacitance C pF rss 1.1 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz g DS GS 7.0 Total Gate Charge (V = 10V) Q nC GS g 3.6 nC Total Gate Charge (V = 4.5V) Q GS g V = 15V, I = 9A DD D Gate-Source Charge 0.9 nC Q gs Gate-Drain Charge 1.5 nC Q gd Turn-On Delay Time 1.8 ns t D(ON) Turn-On Rise Time 1.9 ns t V = 15V, V = 10V, R DD GS 7.5 Turn-Off Delay Time t ns R = 6, I = 9A D(OFF) G D 2.4 Turn-Off Fall Time t ns F 10 Reverse Recovery Time t ns RR I = 9A, dI/dt = 100A/s F 2.6 Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMT3020LDV May 2018 Diodes Incorporated www.diodes.com Document number: DS40662 Rev. 2 - 2