STL56N3LLH5 Datasheet N-channel 30 V, 7.6 m typ., 56 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 package Features V R max. I Order code DS DS(on) D STL56N3LLH5 30 V 9 m 56 A Low on-resistance R DS(on) High avalanche ruggedness Low gate drive power loss PowerFLAT 5x6 Applications D(5, 6, 7, 8) 8 7 6 5 Switching applications G(4) Description This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. The device has been optimized to achieve very low on- 1 2 3 4 state resistance, contributing to a FoM that is among the best in its class. Top View S(1, 2, 3) AM15540v2 Product status link STL56N3LLH5 Product summary Order code STL56N3LLH5 Marking 56N3LLH5 Package PowerFLAT 5x6 Packing Tape and reel DS7089 - Rev 7 - May 2021 www.st.com For further information contact your local STMicroelectronics sales office.STL56N3LLH5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 30 V DS V Gate-source voltage +22 / -20 V GS Drain current (continuous) at T = 25 C 56 A C (1) I D Drain current (continuous) at T = 100 C 37 A C Drain current (continuous) at T = 25 C 15 A pcb (2) I D Drain current (continuous) at T = 100 C 10 A pcb (1)(3) I Drain current (pulsed) 224 A DM (2)(3) I Drain current (pulsed) 60 A DM (1) P Total power dissipation at T = 25 C C 62.5 W TOT (2) P Total power dissipation at T = 25 C 4 W pcb TOT (4) E Single pulse avalanche energy 150 mJ AS T Storage temperature range C stg - 55 to 150 T Operating junction temperature range C J 1. This value is rated according to R . thj-c 2. This value is rated according to R . thj-pcb 3. Pulse width is limited by safe operating area. 4. Starting T = 25 C, I = 56 A, V = 50 V. J D DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2 thj-case C/W (1) R Thermal resistance junction-pcb 31.3 thj-pcb 1. When mounted on a 1-inch FR-4 board, 2oz Cu, t < 10 s. DS7089 - Rev 7 page 2/17