X-On Electronics has gained recognition as a prominent supplier of STL60P4LLF6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STL60P4LLF6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STL60P4LLF6 STMicroelectronics

STL60P4LLF6 electronic component of STMicroelectronics
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Part No.STL60P4LLF6
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STL60P4LLF6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
11: USD 0.7532 ea
Line Total: USD 8.29 
Availability - 654
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ: 11  Multiples: 1
Pack Size: 1
Availability Price Quantity
2459
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.6524
10 : USD 1.3122
30 : USD 1.1664
100 : USD 0.9846
500 : USD 0.9037
1000 : USD 0.8551

5820
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.3932

654
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 11
Multiples : 1
11 : USD 0.7532

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the STL60P4LLF6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STL60P4LLF6 and other electronic components in the MOSFETs category and beyond.

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STL60P4LLF6 Datasheet P-channel 40 V, 11.5 m typ., 60 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Features V R max. I Order code DS DS(on) D STL60P4LLF6 40 V 14 m 60 A Very low on-resistance Very low gate charge High avalanche ruggedness PowerFLAT 5x6 Low gate drive power loss D(5, 6, 7, 8) Applications Switching applications G(4) Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits S(1, 2, 3) very low R in all packages. DS(on) AM01475v4 Product status link STL60P4LLF6 Product summary Order code STL60P4LLF6 Marking 60P4LLF6 Package PowerFLAT 5x6 Packing Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS10066 - Rev 3 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL60P4LLF6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 40 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 60 A C (1) I D Drain current (continuous) at T = 100 C 42 A C (1)(3) I Drain current (pulsed) 240 A DM Drain current (continuous) at T = 25 C 13 A pcb (2) I D Drain current (continuous) at T = 100 C 9.3 A pcb (2)(3) I Drain current (pulsed) 52 A DM (1) P Total power dissipation at T = 25 C 100 W TOT C (2) P Total power dissipation at T = 25 C pcb 4.8 W TOT (2) Derating factor 0.03 W/C T Storage temperature -55 to 175 C stg T Maximum junction temperature 175 C J 1. The value is limited by R . thj-case 2. The value is limited by R . thj-pcb 3. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.5 C/W thj-case (1) R Thermal resistance junction-pcb, single operation 31.3 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2oz Cu, t < 10 s. Note: For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. DS10066 - Rev 3 page 2/17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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