STL6P3LLH6 STMicroelectronics

STL6P3LLH6 Datasheet P-channel 30 V, 24 m typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package Features V R max. I P Order code DS DS(on) D TOT STL6P3LLH6 30 V 30 m 6 A 2.9 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications D(5, 6, 7, 8) Switching applications Description G(4) This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all packages. DS(on) S(1, 2, 3) AM01475v4 Product status link STL6P3LLH6 Product summary Order code STL6P3LLH6 Marking 6P3L PowerFLAT Package 3.3 x 3.3 Packing Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS9257 - Rev 4 - March 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL6P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 30 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 6 A C (1) I D Drain current (continuous) at T = 100 C A C 3.8 (1)(2) I Drain current (pulsed) 24 A DM P Total power dissipation at T = 25 C 2.9 W TOT C T Storage temperature - 55 to 150 C stg T Max. operating junction temperature 150 C J 1. The value is rated according R . thj-pcb 2. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 2.50 C/W thj-case (1) R Thermal resistance junction-pcb, single operation 42.8 C/W thj-pcb 1. When mounted on FR-4 board of 1inch, 2oz Cu, t < 10 sec. Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS9257 - Rev 4 page 2/12