STL4N10F7 Datasheet N-channel 100 V, 62 m typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Features Order code V R max. I DS DS(on) D STL4N10F7 100 V 70 m 4.5 A Excellent FoM (figure of merit) Low C /C ration for EMI immunity rss iss High avalanche ruggedness Applications Switching applications D(5, 6, 7, 8) 8 7 6 5 Description This N-channel Power MOSFET utilizes STripFET F7 technology with an G(4) enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 1 2 3 4 AM15810v1 Maturity status link STL4N10F7 Device summary Order code STL4N10F7 Marking 4N1F7 PowerFLAT Package 3.3x3.3 Packing Tape and reel DS9354 - Rev 5 - February 2018 www.st.com/Power Transistors For further information contact your local STMicroelectronics sales office.STL4N10F7 lectrical ratings 1 lectrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 100 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 4.5 A pcb (1) I D Drain current (continuous) at T = 100 C 3.2 A pcb (1)(2) I Drain current (pulsed) 18 A DM (1) P Total dissipation at T = 25 C 2.9 W pcb TOT Drain current (continuous) at T = 25 C 17 A c (3) I D Drain current (continuous) at T = 100 C 11 A c (2)(3) I Drain current (pulsed) 68 A DM (3) P Total dissipation at T = 25 C 35.7 W TOT c T Operating junction temperature range C j -55 to 150 T Storage temperature range C stg 1. This value is rated according to R . thj-pcb 2. Pulse width is limited by safe operating area. 3. This value is rated according to R . thj-case Table 2. Thermal resistance Symbol Parameter Value Unit R Thermal resistance junction-case 3.5 C/W thj-case (1) R Thermal resistance junction-pcb 42.8 C/W thj-pcb 2 1. When mounted on an 1-inch FR-4 board, 2oz Cu, t < 10 s DS9354 - Rev 5 page 2/14