X-On Electronics has gained recognition as a prominent supplier of STL3N10F7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STL3N10F7 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STL3N10F7 STMicroelectronics

Name: STL3N10F7
Brand: STMicroelectronics
SKU: STL3N10F7_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STL3N10F7 electronic component of STMicroelectronics

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See Product Specifications

Part No.	STL3N10F7
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	STMicroelectronics MOSFET
Datasheet:	STL3N10F7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

6000: USD 0.206 ea
Line Total: USD 1236

Availability - 11640
Ship by Thu. 06 Mar to Wed. 12 Mar

MOQ: 6000 Multiples: 3000
Pack Size: 3000

STL3N10F7 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2910

Ship by Thu. 06 Mar to Wed. 12 Mar

MOQ : 3000
Multiples : 3000

3000 : USD 0.2569

10008

Ship by Thu. 06 Mar to Wed. 12 Mar

MOQ : 174
Multiples : 1

174 : USD 0.3744
200 : USD 0.3731
500 : USD 0.2964
1000 : USD 0.2938
5000 : USD 0.2413

11640

Ship by Thu. 06 Mar to Wed. 12 Mar

MOQ : 6000
Multiples : 3000

6000 : USD 0.206
9000 : USD 0.2037
15000 : USD 0.2006
21000 : USD 0.1976

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

4 A 4 A

Vds - Drain-Source Breakdown Voltage

100 V 100 V

Rds On - Drain-Source Resistance

70 mOhms 70 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

4.5 V 4.5 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

2.4 W 2.4 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

Powerflat - 6 Powerflat - 6

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

+/- 20 V +/- 20 V

Qg - Gate Charge

7.8 nC 7.8 nC

Channel Mode

Enhancement Enhancement

Tradename

Stripfet Stripfet

Configuration

Single Single

Series

N - Channel Stripfet N - Channel Stripfet

Brand

Stmicroelectronics Stmicroelectronics

Fall Time

4 ns 4 ns

Rise Time

3 ns 3 ns

Typical Turn-Off Delay Time

11 ns 11 ns

Typical Turn-On Delay Time

6.3 ns 6.3 ns

Transistor Type

1 N - Channel 1 N - Channel

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

STL3N10F7 Alternative Parts

We are delighted to provide the STL3N10F7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STL3N10F7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STL3N10F7 N-channel 100 V, 0.062 typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package Datasheet - production data Features Order code V R max I DS DS(on) D 1 2 STL3N10F7 100 V 0.07 4 A 3 N-channel enhancement mode 6 1 5 2 Low gate charge 4 3 100% avalanche rated PowerFLAT 2x2 Applications Switching applications Description Figure 1. Internal schematic diagram th 2(D) 3(G) 1(D) This device utilizes the 7 generation of design rules of STs proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. D S 5(D) 4(S) 6(D) Bottom view AM11269v1 Table 1. Device summary Order code Marking Packages Packaging STL3N10F7 ST3N PowerFLAT 2x2 Tape and reel April 2014 DocID025948 Rev 2 1/13 This is information on a product in full production. www.st.comContents STL3N10F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID025948 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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C-Max may also be referenced as

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SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Availability	Price	Buy Price	Quantity
2910 Ship by Thu. 06 Mar to Wed. 12 Mar MOQ : 3000 Multiples : 3000	3000 : USD 0.2569

10008 Ship by Thu. 06 Mar to Wed. 12 Mar MOQ : 174 Multiples : 1	174 : USD 0.3744 200 : USD 0.3731 500 : USD 0.2964 1000 : USD 0.2938 5000 : USD 0.2413

11640 Ship by Thu. 06 Mar to Wed. 12 Mar MOQ : 6000 Multiples : 3000	6000 : USD 0.206 9000 : USD 0.2037 15000 : USD 0.2006 21000 : USD 0.1976

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