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X-On Electronics has gained recognition as a prominent supplier of QS8J1TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS8J1TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QS8J1TR ROHM

QS8J1TR electronic component of ROHM
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See Product Specifications
Part No.QS8J1TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET P Chan-12V-4.5A Mid-PowerSwitching
Datasheet: QS8J1TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5494 ea
Line Total: USD 0.55 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5494
10 : USD 0.5438
125 : USD 0.5041
750 : USD 0.4135
1500 : USD 0.3852
2500 : USD 0.3795

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4654
6000 : USD 0.4537
9000 : USD 0.4473

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QS8J1TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS8J1TR and other electronic components in the MOSFETs category and beyond.

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QS8J1 Transistors 1.5V Drive Pch+Pch MOSFET QS8J1 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) z Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) z Applications Each lead has same dimensions Abbreviated symbol : J01 Switching z Packaging specifications z Inner circuit Package Taping (8) (7) (6) (5) Type Code TR 3000 Basic ordering unit (pieces) QS8J1 2 2 (1) Tr1 Source (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE z Absolute maximum ratings (Ta=25C) (8) Tr1 Drain 2 BODY DIODE <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage V 12 V DSS Gate-source voltage VGSS 10 V Continuous ID 4.5 A Drain current 1 Pulsed I 18 A DP Source current Continuous IS 1 A 1 (Body diode) Pulsed ISP 18 A 1.5 W / TOTAL 2 Total power dissipation PD 1.25 W / ELEMENT Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit 83.3 C/W / TOTAL Channel to ambient Rth(ch-a) 100 C/W / ELEMENT Mounted on a ceramic board. 1/5 QS8J1 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=10V, VDS=0V Drain-source breakdown voltage V(BR) DSS 12 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 12V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 6V, ID= 1mA 21 29 m ID= 4.5A, VGS= 4.5V Static drain-source on-state 27 38 m I = 2.2A, V = 2.5V D GS RDS (on) resistance 36 54 m ID= 2.2A, VGS= 1.8V 49 98 m ID= 0.9A, VGS= 1.5V Forward transfer admittance Y 6.5 SV = 6V, I = 4.5A fs DS D Input capacitance Ciss 2450 pF VDS= 6V Output capacitance Coss 320 pF VGS=0V Reverse transfer capacitance Crss 290 pF f=1MHz Turn-on delay time td (on) 12 ns VDD 6V VGS= 4.5V Rise time tr 75 ns ID= 2.2A Turn-off delay time td (off) 390 ns RL 2.7 Fall time tf 215 ns RG=10 VDD 6V Total gate charge Qg 31 nC VGS= 4.5V Gate-source charge Qgs 4.5 nC ID= 4.5A Gate-drain charge Qgd4.0 nC RL 1.3 / RG=10 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 4.5A, V =0V S GS Pulsed 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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