QS8J1 Transistors 1.5V Drive Pch+Pch MOSFET QS8J1 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) z Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) z Applications Each lead has same dimensions Abbreviated symbol : J01 Switching z Packaging specifications z Inner circuit Package Taping (8) (7) (6) (5) Type Code TR 3000 Basic ordering unit (pieces) QS8J1 2 2 (1) Tr1 Source (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE z Absolute maximum ratings (Ta=25C) (8) Tr1 Drain 2 BODY DIODE <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage V 12 V DSS Gate-source voltage VGSS 10 V Continuous ID 4.5 A Drain current 1 Pulsed I 18 A DP Source current Continuous IS 1 A 1 (Body diode) Pulsed ISP 18 A 1.5 W / TOTAL 2 Total power dissipation PD 1.25 W / ELEMENT Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit 83.3 C/W / TOTAL Channel to ambient Rth(ch-a) 100 C/W / ELEMENT Mounted on a ceramic board. 1/5 QS8J1 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=10V, VDS=0V Drain-source breakdown voltage V(BR) DSS 12 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 12V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 6V, ID= 1mA 21 29 m ID= 4.5A, VGS= 4.5V Static drain-source on-state 27 38 m I = 2.2A, V = 2.5V D GS RDS (on) resistance 36 54 m ID= 2.2A, VGS= 1.8V 49 98 m ID= 0.9A, VGS= 1.5V Forward transfer admittance Y 6.5 SV = 6V, I = 4.5A fs DS D Input capacitance Ciss 2450 pF VDS= 6V Output capacitance Coss 320 pF VGS=0V Reverse transfer capacitance Crss 290 pF f=1MHz Turn-on delay time td (on) 12 ns VDD 6V VGS= 4.5V Rise time tr 75 ns ID= 2.2A Turn-off delay time td (off) 390 ns RL 2.7 Fall time tf 215 ns RG=10 VDD 6V Total gate charge Qg 31 nC VGS= 4.5V Gate-source charge Qgs 4.5 nC ID= 4.5A Gate-drain charge Qgd4.0 nC RL 1.3 / RG=10 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 4.5A, V =0V S GS Pulsed 2/5