X-On Electronics has gained recognition as a prominent supplier of QS8K2TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS8K2TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

QS8K2TR ROHM

QS8K2TR electronic component of ROHM
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See Product Specifications
Part No.QS8K2TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET TRANS MOSFET NCH 30V 3.5A 8PIN
Datasheet: QS8K2TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
49: USD 0.832 ea
Line Total: USD 40.77 
Availability - 2551
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ: 49  Multiples: 1
Pack Size: 1
Availability Price Quantity
1891
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 168
Multiples : 1
168 : USD 0.6348
250 : USD 0.6093
500 : USD 0.5873
1000 : USD 0.5681

2910
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 168
Multiples : 1
168 : USD 0.6348
250 : USD 0.6093
500 : USD 0.5873
1000 : USD 0.5681
2500 : USD 0.5513

2551
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 49
Multiples : 1
49 : USD 0.832
74 : USD 0.5542
100 : USD 0.5167
200 : USD 0.5152
500 : USD 0.4339
1000 : USD 0.4095

406
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 168
Multiples : 1
168 : USD 0.6348
250 : USD 0.6093

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the QS8K2TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS8K2TR and other electronic components in the MOSFETs category and beyond.

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QS8K2 Datasheet 30V Nch +Nch Middle Power MOSFET llOutline TSMT8 V 30V DSS R (Max.) 54m DS(on) I 3.5A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K02 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS Continuous drain current I 3.5 A D *1 I Pulsed drain current 12 A D,pulse V Gate - Source voltage 12 V GSS total 1.5 *2 P D Power dissipation element 1.25 W *3 P total 0.7 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 Not Recommended for New Designs QS8K2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 83.3 *2 R thJA Thermal resistance, junction - ambient element - - 100 /W *3 R total - - 178 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 12V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 3.5A - 38 54 GS D Static drain - source *4 R V = 4V, I = 3.5A - 40 56 m DS(on) GS D on - state resistance V = 2.5V, I = 3.5A - 55 77 GS D Gate input resistance R f = 1MHz, open drain - 8 - G Forward Transfer *4 Y V = 10V, I = 3.5A 3.0 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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