QST2TR ROHM

QST2 Transistors General purpose amplification (12V, 3A) QST2 z External dimensions (Unit : mm) z Application Low frequency amplifier Driver 2.8 1.6 z Features 1) Collector current is large. 2) Collector saturation voltage is low. VCE(sat) 250mV at IC = 3A / IB = 60mA Each lead has same dimensions ROHM : TSMT6 Abbreviated symbol : T02 z Equivalent circuit z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V 6pin 5pin 4pin Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V IC 6 A Collector current 1 ICP 10 A 2 500 mW Power dissipation PC 3 1.25 W Junction temperature Tj 150 C 1pin 2pin 3pin C Range of storage temperature Tstg 55 to +150 1 Single pulse, Pw=1ms 2 Each Terminal Mounted on a Recommended t 3 Mounted on a 25mm25mm 0.8mm Ceramic substrate z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 15 V IC= 10A BVCEO 12 V IC= 1mA Collector-emitter breakdown voltage Emitter-base breakdown voltage BVEBO 6 V IE= 10A Collector cutoff current ICBO 100 nA VCB= 15V Emitter cutoff current IEBO 100 nA VEB= 6V Collector-emitter saturation voltage VCE(sat) 120 250 mV IC= 3A, IB= 60mA DC current gain hFE 270 680 VCE= 2V, IC= 500mA Transition frequency fT 250 MHz VCE= 2V, IE=500mA, f=100MHz Corrector output capacitance Cob 80 pF VCB= 10V, IE=0A, f=1MHz Pulsed 20190527-Rev.C1/2 0.4 0.16 (3) (2) ( ) 1 (4) (5) (6) 0.85 2.9QST2 Transistors z Packaging specifications Package Taping TR Type Code Quantity (pcs) 3000 QST2 z Electrical characteristic curves 1000 10 1 Ta=25C IC/IB=20/1 IC/IB=50/1 Pulsed Ta= 40C Pulsed Ta=125C Ta=125C Ta=25C 1 IC/IB=50/1 VBE(sat) Ta= 40C IC/IB=20/1 0.1 IC/IB=10/1 100 0.1 Ta=25C Ta= 40C Ta=125C 0.01 0.01 VCE(sat) VCE= 2V Pulsed 10 0.001 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain Fig.2 Collector-emitter saturation voltage Fig.3 Collector-emitter saturation voltage vs. collector current base-emitter saturation voltage vs. collector current vs. collector current 10 1000 10000 VCE= 2V Ta=25C IC=0A Pulsed VCE= 2V f=1MHz f=100MHz Ta=125C Cib 1000 Ta=25C Ta= 40C 1 100 Cob 100 0.1 10 10 01 10 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Collector output capacitance characteristics vs. emitter current vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 20190527-Rev.C2/2 COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE BASE SATURATION VOLTAGE : VBE (sat) (V) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)