R5009FNX Nch 500V 9A Power MOSFET Datasheet Outline V 500V DSS TO-220FM R (Max.) 0.84 DS(on) I 9A D P 51W (1)(2)(3) D Features Inner circuit (2) 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain *1 3) Gate-source voltage (V ) guaranteed to be 30V. (3) Source GSS (1) 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. (3) 6) Pb-free lead plating RoHS compliant Packaging specifications Packaging Bulk Reel size (mm) - Tape width (mm) - Application Type Basic ordering unit (pcs) 500 Switching Power Supply Taping code - Marking R5009FNX Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 500 V DSS *1 T = 25C I 9 A c D Continuous drain current *1 T = 100C I 4.4 A c D *2 Pulsed drain current A I 36 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 5.4 mJ E AS *4 Avalanche energy, repetitive E 3.5 mJ AR *3 Avalanche current I 4.5 A AR Power dissipation (T = 25C) P 51 W c D T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 1/13 Not Recommended for New DesignsData Sheet R5009FNX Absolute maximum ratings Parameter Symbol Conditions Values Unit V = 400V, I = 9A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.43 C/W thJC Thermal resistance, junction - ambient R - -70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 9A - 580 - V (BR)DS GS D breakdown voltage V = 500V, V = 0V DS GS A Zero gate voltage I T = 25C - 1 100 DSS j drain current T = 125C - - 10 mA j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2 - 4 V GS (th) DS D V = 10V, I = 4.5A GS D Static drain - source *6 T = 25C R - 0.65 0.84 j DS(on) on - state resistance T = 125C - 1.37 - j R Gate input resistance f = 1MHz, open drain - 8.2 - G www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.C 2/13 Not Recommended for New Designs