X-On Electronics has gained recognition as a prominent supplier of R5011ANJTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. R5011ANJTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R5011ANJTL ROHM

R5011ANJTL electronic component of ROHM
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Part No.R5011ANJTL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET TRANS MOSFET NCH 500V 11A 3PIN
Datasheet: R5011ANJTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
58: USD 1.8824 ea
Line Total: USD 109.18 
Availability - 970
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ: 58  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 58
Multiples : 1
58 : USD 1.8824
100 : USD 1.7983
250 : USD 1.7262
500 : USD 1.6638
1000 : USD 1.6095

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R5011ANJTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R5011ANJTL and other electronic components in the MOSFETs category and beyond.

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R5011ANJ Datasheet Nch 500V 11A Power MOSFET llOutline LPT(S) V 500V DSS R (Max.) 0.5 DS(on) I 11A D SC-83 P 75W D TO-263 llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V ) guaranteed GSS to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Power Supply Basic ordering unit (pcs) 1000 Taping code TL Marking R5011ANJ llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 500 V DSS *1 T = 25C I 11 A C D Continuous drain current *1 T = 100C I 5.3 A C D *2 I Pulsed drain current 44 A D,pulse V Gate - Source voltage 30 V GSS *3 E Avalanche energy, single pulse 8.1 mJ AS *4 E Avalanche energy, repetitive 6.5 mJ AR *3 I Avalanche current 5.5 A AR Power dissipation (T = 25C) P 75 W c D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg Reverse diode dv/dt dv/dt 15 V/ns www.rohm.com 1/13 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs R5011ANJ Datasheet llAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 400V, I = 11A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125 j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 1.67 /W thJC Thermal resistance, junction - ambient R - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 5.5A - 580 - V (BR)DS GS D breakdown voltage V = 500V, V = 0V DS GS Zero gate voltage T = 25C I - 0.1 100 A DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 2.5 - 4.5 V GS(th) DS D V = 10V, I = 5.5A GS D Static drain - source *6 R T = 25C - 0.38 0.5 j DS(on) on - state resistance T = 125C - 0.79 - j R Gate input resistance f = 1MHz, open drain - 9.0 - G www.rohm.com 2/13 2015 ROHM Co., Ltd. All rights reserved. 20150730 - Rev.002 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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