R5011ANJ Datasheet Nch 500V 11A Power MOSFET llOutline LPT(S) V 500V DSS R (Max.) 0.5 DS(on) I 11A D SC-83 P 75W D TO-263 llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V ) guaranteed GSS to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Power Supply Basic ordering unit (pcs) 1000 Taping code TL Marking R5011ANJ llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 500 V DSS *1 T = 25C I 11 A C D Continuous drain current *1 T = 100C I 5.3 A C D *2 I Pulsed drain current 44 A D,pulse V Gate - Source voltage 30 V GSS *3 E Avalanche energy, single pulse 8.1 mJ AS *4 E Avalanche energy, repetitive 6.5 mJ AR *3 I Avalanche current 5.5 A AR Power dissipation (T = 25C) P 75 W c D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg Reverse diode dv/dt dv/dt 15 V/ns www.rohm.com 1/13 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs R5011ANJ Datasheet llAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 400V, I = 11A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125 j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 1.67 /W thJC Thermal resistance, junction - ambient R - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 5.5A - 580 - V (BR)DS GS D breakdown voltage V = 500V, V = 0V DS GS Zero gate voltage T = 25C I - 0.1 100 A DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 2.5 - 4.5 V GS(th) DS D V = 10V, I = 5.5A GS D Static drain - source *6 R T = 25C - 0.38 0.5 j DS(on) on - state resistance T = 125C - 0.79 - j R Gate input resistance f = 1MHz, open drain - 9.0 - G www.rohm.com 2/13 2015 ROHM Co., Ltd. All rights reserved. 20150730 - Rev.002 Not Recommended for New Designs