R5011ANX
Transistors
10V Drive Nch MOSFET
R5011ANX
z Dimensions (Unit : mm)
z Structure
Silicon N-channel MOSFET TO-220FM
10.0 3.2 4.5
2.8
z Features
1) Low on-resistance.
1.2
2) Fast switching speed.
1.3
3) Gate-source voltage (VGSS)
guaranteed to be r 30V.
0.8
(1)Base
4) Drive circuits can be simple.
2.54 2.54 0.75 2.6
(2)Collector (1) (2)(3)
5) Parallel use is easy.
(3)Emitter
zApplications
Switching
z z Packaging specifications z Inner circuit
Package Bulk
Type Code
Basic ordering unit (pieces)
500
1
R5011ANX
zz Absolute maximum ratings (Ta=25q C)
(1) (2) (3)
Parameter
Symbol Limits Unit
(1) Gate
(2) Drain
Drain-source voltage VDSS 500 V
1 Body Diode
(3) Source
Gate-source voltage VGSS 30 V
3
Continuous ID 11 A
Drain current
1
Pulsed 44
IDP A
3
Continuous 11
IS A
Source current
1
(Body Diode)
Pulsed 44
ISP A
2
Avalanche Current IAS 5.5 A
2
Avalanche Energy EAS 8.1
mJ
Total power dissipation (Tc=25C) PD 50 W
Channel temperature Tch 150 C
Range of storage temperature 55 to +150
Tstg C
1 Pw10s, Duty cycle1%
2 L 500H, VDD=50V, RG=25, Starting, Tch=25C
3 Limited only by maximum tempterature allowed
1/5
Not Recommended for
New Designs
14.0 15.0
12.0
2.5 8.0R5011ANX
Transistors
z Thermal resistance
Parameter Symbol Limits Unit
Channel to case Rth(ch-c) 2.5 C/W
z z Electrical characteristics (Ta=25q C)
Parameter Symbol Min. Max. Unit Conditions
Typ.
Gate-source leakage IGSS 100 nA VGS=30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 500 V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS 100 A VDS=500V, VGS=0V
Gate threshold voltage VGS(th) 2.5 4.5 V VDS=10V, ID=1mA
Static drain-source on-state resistance RDS(on) 0.5 ID=5.5A, VGS=10V
0.38
Forward transfer admittance | Yfs | 3.5 S ID=5.5A, VDS=10V
Ciss pF VDS=25V
Input capacitance 1000
Output capacitance Coss 400 pF VGS=0V
Reverse transfer capacitance Crss 35 pF f=1MHz
Turn-on delay time td(on) ns ID=5.5A, VDD 250V
26
Rise time tr ns VGS=10V
28
td(off) ns RL=45.5
Turn-off delay time 75
tf ns RG=10
Fall time 30
Total gate charge Qg 30 nC VDD 250V
ID=11A
Gate-source charge Qgs nC
7
VGS=10V
RL=22.7 / RG=10
Gate-drain charge Qgd nC
12
Pulsed
z z Body diode characteristics (Source-drain) (Ta=25q C)
Parameter Symbol
Min. Typ. Max. Unit Conditions
Forward voltage VSD 1.5 V IS= 11A, VGS=0V
Pulsed
2/5
Not Recommended for
New Designs