R6008FNX Nch 600V 8A Power MOSFET Datasheet l Outline V 600V DSS TO-220FM R (Max.) 0.95W DS(on) I 8A D P 50W (1)(2) (3) D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (V ) guaranteed to be 30V. (3) Source GSS 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 500 Switching Power Supply Taping code - Marking R6008FNX lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 T = 25C I 8 A c D Continuous drain current *1 T = 100C A I 3.9 c D *2 Pulsed drain current I 32 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 4.3 mJ E AS *4 Avalanche energy, repetitive E 3.4 mJ AR *3 Avalanche current I 4 A AR Power dissipation (T = 25C) P 50 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.B 1/13 Not Recommended for New DesignsData Sheet R6008FNX lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 480V, I = 8A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.5 C/W thJC Thermal resistance, junction - ambient R - - 70 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 8A - 700 - V (BR)DS GS D breakdown voltage V = 600V, V = 0V DS GS mA Zero gate voltage I T = 25C - 1 100 DSS j drain current T = 125C - - 10 mA j Gate - Source leakage current I V = 30V, V = 0V - - nA 100 GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2 - 4 V GS (th) DS D V = 10V, I = 4A GS D Static drain - source *6 R T = 25C - 0.73 0.95 W j DS(on) on - state resistance T = 125C - 1.62 - j R Gate input resistance f = 1MHz, open drain - 8.0 - W G www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.B 2/13 Not Recommended for New Designs