R6009JND3TL1 ROHM

R6009JND3 Datasheet Nch 600V 9A Power MOSFET llOutline TO-252 V 600V DSS R (Max.) 0.585 DS(on) I 9A D P 125W D llFeatures llInner circuit 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating RoHS compliant llApplication llPackaging specifications Switching Packing Embossed Tape Packing code TL1 Marking R6009JND3 Quantity (pcs) 2500 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 Continuous drain current (T = 25C) I 9 A c D *2 I Pulsed drain current 27 A DP V Gate - Source voltage 30 V GSS *3 I Avalanche current, single pulse 1.8 A AS *3 E Avalanche energy, single pulse 177 mJ AS Power dissipation (T = 25C) P 125 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. R6009JND3 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - - 1.00 /W thJC R Thermal resistance, junction - ambient - - 100 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I - - 100 A DSS drain current T = 25C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 1.38mA 5.0 6.0 7.0 V GS(th) DS GS D V = 15V, I = 4.5A GS D Static drain - source *5 R - 0.450 0.585 DS(on) on - state resistance T = 25C j Gate resistance R f = 1MHz, open drain - 2.1 - G www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.