X-On Electronics has gained recognition as a prominent supplier of R6011KND3TL1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6011KND3TL1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6011KND3TL1 ROHM

R6011KND3TL1 electronic component of ROHM
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Part No.R6011KND3TL1
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 600 V 11A (Tc) 124W (Tc) Surface Mount TO-252
Datasheet: R6011KND3TL1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.728 ea
Line Total: USD 2.73 
Availability - 2240
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2240
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 2.728
10 : USD 2.101
100 : USD 1.562
500 : USD 1.408
1000 : USD 1.353
2500 : USD 1.342
10000 : USD 1.331

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R6011KND3TL1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6011KND3TL1 and other electronic components in the MOSFETs category and beyond.

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R6011KND3 Datasheet Nch 600V 11A Power MOSFET llOutline TO-252 V 600V DSS R (Max.) 0.39 DS(on) I 11A D P 124W D llFeatures llInner circuit 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating RoHS compliant llApplication llPackaging specifications Switching Packing Embossed Tape Packing code TL1 Marking R6011K Quantity (pcs) 2500 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 Continuous drain current (T = 25C) I 11 A c D *2 I Pulsed drain current 33 A DP static 20 V Gate - Source voltage V GSS AC(f 1Hz) 30 V Avalanche current, single pulse I 1.8 A AS *3 E Avalanche energy, single pulse 210 mJ AS Power dissipation (T = 25C) P 124 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190527 - Rev.002 R6011KND3 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 1.0 /W thJC *5 R Thermal resistance, junction - ambient - - 147 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS(th) DS D V = 10V, I = 3.8A GS D Static drain - source *6 R T = 25C - 0.34 0.39 DS(on) j on - state resistance T = 125C - 0.72 - j Gate resistance R f = 1MHz, open drain - 1.5 - G www.rohm.com 2/12 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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