X-On Electronics has gained recognition as a prominent supplier of R6507ENJTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6507ENJTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6507ENJTL ROHM

R6507ENJTL electronic component of ROHM
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See Product Specifications
Part No.R6507ENJTL
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 650 V 7A (Tc) 78W (Tc) Surface Mount LPTS
Datasheet: R6507ENJTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.1625 ea
Line Total: USD 5.16 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 2.0217

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 3.8351
10 : USD 3.2992
100 : USD 2.7032
500 : USD 2.3013

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 3.8351
10 : USD 3.2992
100 : USD 2.7032
500 : USD 2.3013

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 5.1625
10 : USD 3.276
100 : USD 2.3096
500 : USD 1.8191
1000 : USD 1.7876

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 1.595
2000 : USD 1.54

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R6507ENJTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6507ENJTL and other electronic components in the MOSFETs category and beyond.

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R6507ENJ Datasheet Nch 650V 7A Power MOSFET llOutline LPT(S) V 650V DSS R (Max.) 0.665 DS(on) I 7A D P 78W D llFeatures llInner circuit 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating RoHS compliant llApplication llPackaging specifications Switching Packing Embossed Tape Packing code TL Marking R6507ENJ Quantity (pcs) 1000 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 650 V DSS *1 Continuous drain current (T = 25C) I 7 A c D *2 I Pulsed drain current 21 A DP static 20 V Gate - Source voltage V GSS AC(f 1Hz) 30 V Avalanche current, single pulse I 1.3 A AS *3 E Avalanche energy, single pulse 136 mJ AS Power dissipation (T = 25C) P 78 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.003 R6507ENJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 1.6 /W thJC *5 R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 650 - - V (BR)DSS GS D voltage V = 650V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = 200A Gate threshold voltage 2 - 4 V GS(th) DS GS D V = 10V, I = 2.4A GS D Static drain - source *6 R T = 25C - 0.605 0.665 DS(on) j on - state resistance T = 125C - - - j Gate resistance R f = 1MHz, open drain - 10.6 - G www.rohm.com 2/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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