X-On Electronics has gained recognition as a prominent supplier of R8002ANJFRGTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. R8002ANJFRGTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R8002ANJFRGTL ROHM

R8002ANJFRGTL electronic component of ROHM
R8002ANJFRGTL ROHM
R8002ANJFRGTL MOSFETs
R8002ANJFRGTL  Semiconductors

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See Product Specifications
Part No. R8002ANJFRGTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 800V Vdss 2A ID TO-263D2PAK; LPTS
Datasheet: R8002ANJFRGTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.5987 ea
Line Total: USD 3.6 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 1
Multiples : 1
1 : USD 3.5987
10 : USD 2.3235
100 : USD 1.6494
500 : USD 1.4259

0
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1000
Multiples : 1000
1000 : USD 1.254
2000 : USD 1.188

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R8002ANJFRGTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R8002ANJFRGTL and other electronic components in the MOSFETs category and beyond.

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R8002ANJ FRG Datasheet Nch 800V 2A Power MOSFET llOutline TO-263S V 800V DSS SC-83 R (Max.) 4.3 DS(on) LPT(S) I 2A D P 62W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating RoHS compliant 5) AEC-Q101 qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Power Supply Basic ordering unit (pcs) 1000 Taping code TL Marking R8002ANJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 800 V DSS *1 Continuous drain current (T = 25C) I 2 A c D *2 I Pulsed drain current 8 A DP Gate - Source voltage V 30 V GSS *3 Avalanche current, single pulse I 1 A AS *3 E Avalanche energy, single pulse 0.265 mJ AS Power dissipation (T = 25C) P 62 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170920 - Rev.001 R8002ANJ FRG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - - 2.01 /W thJC R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 800 - - V (BR)DSS GS D voltage V = 800V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - - j I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3.0 - 5.0 V GS(th) DS D V = 10V, I = 1.0A GS D Static drain - source *4 R T = 25C - 3.3 4.3 DS(on) j on - state resistance T = 125C - 7.2 - j Gate resistance R f = 1MHz, open drain - 6.6 - G www.rohm.com 2/11 20170920 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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