X-On Electronics has gained recognition as a prominent supplier of RQ5C020TPTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ5C020TPTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ5C020TPTL ROHM

RQ5C020TPTL electronic component of ROHM
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See Product Specifications
Part No.RQ5C020TPTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET PCH -20V -2A SMALL SIGNAL
Datasheet: RQ5C020TPTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6512 ea
Line Total: USD 0.65 
Availability - 4456
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4456
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6512
10 : USD 0.4191
100 : USD 0.2827
500 : USD 0.2277
1000 : USD 0.2101
3000 : USD 0.1837
9000 : USD 0.1683
24000 : USD 0.1628

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ5C020TPTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5C020TPTL and other electronic components in the MOSFETs category and beyond.

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RQ5C020TP Datasheet Pch -20V -2A Small Signal MOSFET llOutline SOT-346T V -20V DSS SC-96 R (Max.) 135m DS(on) TSMT3 I 2A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT3) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Load SW Basic ordering unit (pcs) 3000 Taping code TL Marking TX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS I Continuous drain current 2 A D *1 I Pulsed drain current 8 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170203 - Rev.002 RQ5C020TP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -18.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 12V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -0.7 - -2.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.3 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -2A - 100 135 GS D Static drain - source *4 R V = -4.0V, I = -2A - 110 150 m DS(on) GS D on - state resistance V = -2.5V, I = -1A - 180 250 GS D Forward Transfer *4 Y V = -10V, I = -1A 1.2 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic boad (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20170203 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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