UT6MA2 Datasheet 30V Nch+Pch Middle Power MOSFET llOutline DFN2020-8D Symbol Tr1:Nch Tr2:Pch V 30V -30V DSS HUML2020L8 R (Max.) 46m 70m DS(on) I 4.0A 4.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Quantity (pcs) 3000 Taping code TCR Marking MA2 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 30 -30 V DSS I Continuous drain current 4.0 4.0 A D *1 I Pulsed drain current 12 12 A DP V Gate - Source voltage 20 20 V GSS *2 I Avalanche current, single pulse 3.0 -3.0 A AS *2 E Avalanche energy, single pulse 6.4 6.5 mJ AS total 2.0 *3 P Power dissipation W D element 1.4 T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/19 20190527 - Rev.002 UT6MA2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. Tr1 V = 0V, I = 1mA 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -30 - - GS D V I = 1mA, referenced to 25 (BR)DSS Tr1 D - 21 - Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 - -22 - D Tr1 V = 30V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = -30V, V = 0V - - -1 DS GS Tr1 V = 20V, VDS = 0V - - 100 GS Gate - Source I nA GSS leakage current Tr2 V = 20V, VDS = 0V - - 100 GS V = V , I = 1mA Tr1 1.0 - 2.5 DS GS D Gate threshold V V GS(th) voltage V = V , I = -1mA Tr2 -1.0 - -2.5 DS GS D I = 1mA, referenced to 25 V Tr1 D - -3 - GS(th) Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 2.9 - j D V = 10V, I = 4.0A - 37 46 GS D Tr1 V = 4.5V, I = 4.0A - 59 80 GS D Static drain - source *4 R m DS(on) on - state resistance V = -10V, I = -4.0A - 55 70 GS D Tr2 V = -4.5V, I = -4.0A - 80 103 GS D Tr1 - 4.3 - R Gate resistance f=1MHz, open drain G Tr2 - 13 - Tr1 V = 5V, I = 3A 1.7 - - DS D Forward Transfer *4 Y S fs Admittance Tr2 V = -5V, I = -3A 2.5 - - DS D *1 Pw 10s, Duty cycle 1% *2 Tr1: L 1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j Tr2: L 1mH, V = -15V, R = 25, STARTING T = 25 Fig.6-1,6-2 DD G j *3 Mounted on a Cu board (40400.8mm) *4 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/19 20190527 - Rev.002