X-On Electronics has gained recognition as a prominent supplier of UT6MA3TCR MOSFET across the USA, India, Europe, Australia, and various other global locations. UT6MA3TCR MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.
We are delighted to provide the UT6MA3TCR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UT6MA3TCR and other electronic components in the MOSFET category and beyond.
The UT6MA3TCR is a 20V Nch+Pch silicon MOSFET manufactured by ROHM. It is a MOSFET (metal oxide semiconductor field effect transistor) which is a type of transistor used to switch electrical signals or create power amplification. This device features a maximum drain-source voltage (VDSS) of 20V and a drain current (ID) of 3.3A. It also has the ability to be driven with a PWM signal, making it a useful part for digital control systems. The drain to source on resistance (RDS (ON)) is typically 4.5mO making it an efficient and low power MOSFET. The gate to source threshold voltage (Vth) is typically 2.2V and the gate to source voltage is 20V. This MOSFET is designed for high frequency applications up to 4GHz with a maximum junction temperature of 150°C ensuring reliable performance.
