DMC1016UPD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features and Benefits
Thermally Efficient Package-Cooler Running Applications
I
D
Device V R
(BR)DSS DS(ON)
High Conversion Efficiency
T = +25C
A
Low R Minimizes On State Losses
DS(ON)
9.5A
17m @ V = 4.5V
GS
Low Input Capacitance
Q1 12V
25m @ V = 2.5V 7.8A Fast Switching Speed
GS
ESD Protected Gate for Q2 P-Channel
20m @ V = -4.5V -8.7A
GS
Q2
-20V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
-7.8A
25m @ V = -2.5V
GS
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation Complementary Pair Enhancement Mode
Case: PowerDI5060-8 (Type C)
MOSFET has been designed to minimize R and yet maintain
DS(ON)
Case Material: Molded Plastic, Green Molding Compound. UL
superior switching performance. This device is ideal for use in
Flammability Classification Rating 94V-0
Notebook battery power management and Loadswitch.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish 100% Matte Tin Annealed over Copper
Notebook Battery Power Management
e3
Leadframe. Solderable per MIL-STD-202, Method 208
DC-DC Converters
Terminal Connections: See Diagram Below
Loadswitch
Weight: 0.097 grams (Approximate)
D1
D2
S1
D1
G1
D1
G2 S2 D2
G1
D2
G2
S1
Gate Protection
S2
Diode
Pin1
Top View
Top View Bottom View Q1 N-Channel MOSFET Q2 P-Channel MOSFET Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMC1016UPD-13 PowerDI5060-8 (Type C) 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC1016UPD
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Q1 Value Q2 Value Units
Drain-Source Voltage V 12 -20 V
DSS
Gate-Source Voltage V 8 8 V
GSS
Steady T = +25C 9.5 -8.7
A
A
I
D
State 7.6 -7.0
T = +70C
A
Continuous Drain Current (Note 5) V = 4.5V
GS
T = +25C 13.0 -12.0
A
t<10s I A
D
10.4 -9.6
T = +70C
A
Maximum Body Diode Forward Current (Note 5) I 2.6 A
S
Pulsed Drain Current (10s pulse, duty cycle = 1%) I 65 A
DM
Avalanche Current (Note 6) L = 0.1mH I 20 A
AS
Avalanche Energy (Note 6) L = 0.1mH E 25 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Units
2.3
T = +25C
A
Total Power Dissipation (Note 5) W
P
D
T = +70C 1.5
A
Steady state 55
Thermal Resistance, Junction to Ambient (Note 5) R
JA
t<10s 29
C/W
Thermal Resistance, Junction to Case R 6.2
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics Q1 N-Channel (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 12 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 12V, V = 0V
DSS DS GS
Gate-Source Leakage nA
I 100 V = 8V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 0.6 0.8 1.5 V
V V = V , I = 250A
GS(TH) DS GS D
9.0 17
V = 4.5V, I = 11.8A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
11 25 V = 2.5V, I = 9.8A
GS D
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 2.9A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 1454
iss
V = 6V, V = 0V,
DS GS
Output Capacitance C 336 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance 311
Crss
Gate Resistance 1.6
RG VDS = 0V, VGS = 0V, f = 1.0MHz
18
Total Gate Charge (V = 4.5V) Q
GS g
32
Total Gate Charge (V = 8V) Q
GS g
nC
V = 6V, I = 11.8A
DS D
Gate-Source Charge 3.1
Q
gs
Gate-Drain Charge 4.3
Q
gd
Turn-On Delay Time t 6.6
D(ON)
Turn-On Rise Time t 9.6 V = 6V, R = 6
R DD L
ns
Turn-Off Delay Time t 42.5 V = 4.5V, R = 6, I = 1A
D(OFF) GS G D
Turn-Off Fall Time t 22.5
F
Body Diode Reverse Recovery Time t 16.6 ns I = 11.8A, di/dt = 100A/s
RR F
Body Diode Reverse Recovery Charge 2.8 nC
Q I = 11.8A, di/dt = 100A/s
RR F
POWERDI is a registered trademark of Diodes Incorporated.
2 of 10
DMC1016UPD March 2016
Diodes Incorporated
www.diodes.com
Document number: DS37799 Rev. 2 - 2