X-On Electronics has gained recognition as a prominent supplier of RYC002N05T316 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RYC002N05T316 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RYC002N05T316 ROHM

RYC002N05T316 electronic component of ROHM
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See Product Specifications
Part No.RYC002N05T316
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 0.9V Drive Nch Si MOSFET
Datasheet: RYC002N05T316 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0717 ea
Line Total: USD 0.72 
Availability - 761
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
761
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0717
100 : USD 0.0574
300 : USD 0.0501
3000 : USD 0.0448
6000 : USD 0.0404
9000 : USD 0.0382

26153
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3157
10 : USD 0.2035
100 : USD 0.1023
1000 : USD 0.088
3000 : USD 0.0715
9000 : USD 0.0649
24000 : USD 0.0649
45000 : USD 0.0616

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RYC002N05T316 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RYC002N05T316 and other electronic components in the MOSFETs category and beyond.

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RYC002N05 Datasheet Nch 50V 200mA Small Signal MOSFET llOutline SOT-23 V 50V DSS SST3 R (Max.) 2.2 DS(on) I 200mA D P 350mW D llInner circuit llFeatures 1) High speed switching 2) Small package(SOT-23) 3) Ultra low voltage drive(0.9V drive) 4) Pb-free lead plating RoHS compliant. 5) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code T316 Marking QJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 50 V DSS I Continuous drain current 200 mA D *1 I Pulsed drain current 800 mA DP V Gate - Source voltage 8 V GSS *2 P 350 mW D Power dissipation *3 P 200 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160824 - Rev.001 RYC002N05 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 357 /W thJA Thermal resistance, junction - ambient *3 R - - 625 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 50 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 53.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 50V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 0.3 - 0.8 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.4 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 200mA - 1.6 2.2 GS D V = 2.5V, I = 200mA - 1.7 2.4 GS D Static drain - source *4 R V = 1.5V, I = 200mA - 2.0 2.8 DS(on) GS D on - state resistance V = 1.2V, I = 100mA - 2.2 3.3 GS D V = 0.9V, I = 10mA - 3.0 9.0 GS D Forward Transfer *4 Y V = 10V, I = 200mA 200 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (7.05.00.8mm) 2 *3 Mounted on a FR4 (20.012.00.8mm,Cu pad : 0.8mm ) *4 Pulsed www.rohm.com 2/11 20160824 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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