X-On Electronics has gained recognition as a prominent supplier of RYE002N05TCL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RYE002N05TCL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RYE002N05TCL ROHM

Name: RYE002N05TCL
Brand: ROHM
SKU: RYE002N05TCL_ROHM
Availability: InStock
Rating: 5 (11 reviews)

RYE002N05TCL electronic component of ROHM

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See Product Specifications

Part No.	RYE002N05TCL
Manufacturer:	ROHM
Category:	MOSFETs
Description:	ROHM Semiconductor MOSFET
Datasheet:	RYE002N05TCL Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.2551 ea
Line Total: USD 0.26

Availability - 940
Ship by Wed. 09 Apr to Fri. 11 Apr

MOQ: 1 Multiples: 1
Pack Size: 1

RYE002N05TCL More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

494

Ship by Fri. 18 Apr to Wed. 23 Apr

MOQ : 10
Multiples : 10

10 : USD 0.0423
100 : USD 0.0413
300 : USD 0.0408
1000 : USD 0.0311

940

Ship by Wed. 09 Apr to Fri. 11 Apr

MOQ : 1
Multiples : 1

1 : USD 0.2551
10 : USD 0.1765
100 : USD 0.108
500 : USD 0.0634
1000 : USD 0.0447
3000 : USD 0.0394
6000 : USD 0.034
9000 : USD 0.0309
24000 : USD 0.0277

Specifications

Manufacturer

ROHM ROHM

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

200 mA 200 mA

Vds - Drain-Source Breakdown Voltage

50 V 50 V

Rds On - Drain-Source Resistance

9 Ohms 9 Ohms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

300 mV 300 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

150 mW 150 mW

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 416 - 3 SOT - 416 - 3

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

8 V 8 V

Channel Mode

Enhancement Enhancement

Series

Rye002n05 Rye002n05

Brand

Rohm Semiconductor Rohm Semiconductor

Configuration

Single Single

Height

0.7 mm 0.7 mm

Length

1.6 mm 1.6 mm

Product

Mosfet Mosfet

Transistor Type

1 N - Channel 1 N - Channel

Type

Power Mosfet Power Mosfet

Width

0.8 mm 0.8 mm

Forward Transconductance - Min

200 Ms 200 Ms

Cnhts

8541290000 8541290000

Fall Time

43 ns 43 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Rise Time

8 ns 8 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-Off Delay Time

17 ns 17 ns

Typical Turn-On Delay Time

5 ns 5 ns

Notes:- Show Stocked Products With Similar Attributes.

RYE002N05TCL Alternative Parts

We are delighted to provide the RYE002N05TCL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RYE002N05TCL and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

SemiconductorThe RYE002N05TCL with ROHM Semiconductor MOSFET is a standard Low-Voltage/Low-Power N-Channel MOSFET manufactured by ROHM Semiconductor. It is designed to provide excellent switching performance in applications where high switching speed and low on-resistance are required. This MOSFET features a drain current up to 3 A, a drain-source voltage of 30 V, an on-resistance of 0.5 Ohm, and a maximum power dissipation of 480 mW. It also has a fast switching speed of 200 V/us, a body diode forward voltage of 1.2 V, and an Avalanche energy of 10 mJ. This MOSFET is ideal for applications such as automotive, consumer goods, industrial gear, and motor drive.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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Availability	Price	Buy Price	Quantity
494 Ship by Fri. 18 Apr to Wed. 23 Apr MOQ : 10 Multiples : 10	10 : USD 0.0423 100 : USD 0.0413 300 : USD 0.0408 1000 : USD 0.0311

940 Ship by Wed. 09 Apr to Fri. 11 Apr MOQ : 1 Multiples : 1	1 : USD 0.2551 10 : USD 0.1765 100 : USD 0.108 500 : USD 0.0634 1000 : USD 0.0447 3000 : USD 0.0394 6000 : USD 0.034 9000 : USD 0.0309 24000 : USD 0.0277

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Hot	RZF020P01TL P-Channel 12 V 2A (Ta) 800mW (Ta) Surface Mount TUMT3 Stock : 2280 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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