RYU002N05 Data Sheet 0.9V Drive Nch MOSFET RYU002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) High speed switing. (2) (1) 2) Small package(UMT3). 3)Ultra low voltage drive(0.9V drive). Abbreviated symbol : QJ Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code T306 Basic ordering unit (pieces) 3000 RYU002N05 Absolute maximum ratings (T = 25 C) a (2) (1) (1) SOURCE Parameter Symbol Limits Unit (2) GATE (3) DRAIN Drain-source voltage V 50 V DSS Gate-source voltage V 8V GSS Continuous I 200 mA D Drain current *1*1 Pulsed I 800 mA DP Continuous I 150 mA Source current S (Body Diode) *1*1 Pulsed I 800 mA SP *2*2 Power dissipation P 200 mW D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 625 C / W * Each terminal mounted on a recommended land. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.A 1/5Data Sheet RYU002N05 Electrical characteristics (T = 25 C) a Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 8V, V =0V GSS GS DS Drain-source breakdown voltage V 50 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =50V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 0.8 V V =10V, I =1mA GS (th) DS D - 1.6 2.2 I =200mA, V =4.5V D GS - 1.7 2.4 I =200mA, V =2.5V D GS Static drain-source on-state R * - 2.0 2.8 I =200mA, V =1.5V DS (on) D GS resistance - 2.2 3.3 I =100mA, V =1.2V D GS - 3.0 9.0 I =10mA, V =0.9V D GS * Forward transfer admittance l Y l 0.2 - - S I =200mA, V =10V fs D DS Input capacitance C - 26 - pF V =10V iss DS Output capacitance C -6 - pFV =0V oss GS Reverse transfer capacitance C - 3 - pF f=1MHz rss Turn-on delay time t -5 - nsI =100mA, V 25V ** d(on) D DD Rise time t -8 - nsV =4.5V r ** GS Turn-off delay time t - 17 - ns R =250 ** d(off) L Fall time t - 43 - ns R =10 f ** G *Pulsed Body diode characteristics (Source-Drain) (T = 25 C) a Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =200mA, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.04 - Rev.A