RZQ045P01 Transistors 1.5V Drive Pch MOSFET RZQ045P01 z Dimensions (Unit : mm) z Structure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 z Features 0.95 0.95 0.7 (6) (5) (4) 1) Low on-resistance. 2) High power package. 0~0.1 (1) (2) (3) 3) Low voltage drive. (1.5V) 1pin mark 0.16 0.4 Each lead has same dimensions z Applications Abbreviated symbol : YG Switching z Packaging specifications z Equivalent circuit Package Taping (6) (5) (4) Type Code TR Basic ordering unit (pieces) 3000 2 RZQ045P01 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 12 V Gate-source voltage VGSS 10 V Continuous ID 4.5 A Drain current 1 Pulsed IDP 12 A Source current Continuous IS 1 A 1 (Body diode) Pulsed ISP 12 A 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 100 C / W Mounted on a ceramic board. 1/5 1.6 2.8 0.3~0.6RZQ045P01 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 10 AV =10V, V =0V GSS GS DS Drain-source breakdown voltage V(BR) DSS 12 VID= 1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS= 12V, VGS=0V Gate threshold voltage V 0.3 1.0 V V = 6V, I = 1mA GS (th) DS D 25 35 m ID= 4.5A, VGS= 4.5V 31 43 m ID= 2.2A, VGS= 2.5V Static drain-source on-state R DS (on) resistance 39 58 m I = 2.2A, V = 1.8V D GS 50 100 m ID= 0.9A, VGS= 1.5V Forward transfer admittance Yfs 6.5 SVDS= 6V, ID= 4.5A Input capacitance C 2450 pF V = 6V iss DS Output capacitance Coss 320 pF VGS=0V Reverse transfer capacitance Crss 290 pF f=1MHz Turn-on delay time t 12 ns ID= 2.2A d (on) VDD 6V Rise time tr 75 ns VGS= 4.5V Turn-off delay time td (off) 390 ns RL 2.7 Fall time t 215 ns RG=10 f Total gate charge Qg 31 nC VDD 6V RL 1.3 Gate-source charge Qgs 4.5 nC VGS= 4.5V RG=10 Gate-drain charge Q 4.0 nC I = 4.5A gd D Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 4.5A, VGS=0V Pulsed 2/5