SCH2080KEC ROHM

SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet lOutline TO-247 V 1200V DSS R (Typ.) 80mW DS(on) I 40A D P 262W D lFeatures lInner circuit 1) Low on-resistance (1) Gate 2) Fast switching speed (2) Drain 3) Fast reverse recovery (3) Source 4) Low V SD *1 Body Diode *2 SBD 5) Easy to parallel 6) Simple to drive lPackaging specifications 7) Pb-free lead plating RoHS compliant Packing Tube Reel size (mm) - lApplication Tape width (mm) - Solar inverters Type Basic ordering unit (pcs) 30 DC/DC converters Packing code C Induction heating Marking SCH2080KE Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 1200 V DSS *1 T = 25C 40 A I c D Continuous drain current *1 T = 100C I 28 A c D *2 Pulsed drain current I 80 A D,pulse Gate - Source voltage (DC) V V -6 to 22 GSS *3 Gate - Source surge voltage (T 300nsec) V -10 to 26 V surge GSS-surge Power dissipation (T = 25C) P 262 W c D T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50210-SCH2080KE 2018 ROHM Co., Ltd. All rights reserved. 1/12 30.Oct.2018 - rev.003 TSZ22111 14001SCH2080KE Datasheet lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.44 0.57 C/W thJC lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1200 - - V (BR)DSS GS D voltage V = 1200V, V = 0V DS GS Zero gate voltage I T = 25C - 20 400 A DSS j drain current T = 150C - 170 - j I V = +22V, V = 0V Gate - Source leakage current - - 100 nA GSS+ GS DS I Gate - Source leakage current V = -6V, V = 0V - - nA -100 GSS- GS DS V V = V , I = 4.4mA Gate threshold voltage 1.6 2.8 4.0 V GS (th) DS GS D *1 Limited only by maximum temperature allowed. *2 PW 10s, Duty cycle 1% *3 Example of acceptable Vgs waveform *4 Pulsed www.rohm.com TSQ50210-SCH2080KE 2018 ROHM Co., Ltd. All rights reserved. 2/12 30.Oct.2018 - rev.003 TSZ22111 15001