SCS110KG SiC Schottky Barrier Diode Datasheet lOutline (1) TO-220AC V 1200V R I 10A F Q 34nC C (3) (2) lFeatures lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode 3) High-speed switching possible (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Tube Reel size (mm) - lConstruction Tape width (mm) - Silicon carbide epitaxial planer type Type Basic ordering unit (pcs) 50 Taping code - Marking SCS110KG lAbsolute maximum ratings (Tj = 25C) Parameter Symbol Value Unit V Reverse voltage (repetitive peak) 1200 V RM V Reverse voltage (DC) 1200 V R 1 I Continuous forward current A F 10* 2 A 45* I Surge no repetitive forward current FSM 3 A 190* 4 I Repetitive peak forward current A FRM 38* 5 Total power dissipation P W D 100* Junction temperature Tj 175 C Range of storage temperature Tstg -55 to +175 C Thermal resistance, junction to case Rth(j-c) 1.4 C/W *1 Tc=132C *2 PW=8.3ms sinusoidal,Tj=25C *3 PW=10 ms square,Tj=25C *4 Tc=100C,Tj=150C,Duty cycle=10% *5 Tc=25C www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.09 - Rev.A 1/5Data Sheet SCS110KG lElectrical characteristics (Tj = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. V I =0.2mA DC blocking voltage 1200 - - V DC R I =10A,Tj=25C - 1.5 1.75 V F V Forward voltage F I =10A,Tj=175C - 2.0 - V F V =1200V,Tj=25C - 10 200 mA R I Reverse current R V =1200V,Tj=175C - 120 - mA R V =1V,f=1MHz - 650 - pF R Total capacitance C V =800V,f=1MHz - 50 - pF R Total capacitive charge Qc V =800V,di/dt=500A/ms - 34 - nC R V =800V,di/dt=500A/ms Switching time tc - 16 - ns R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.09 - Rev.A 2/5