X-On Electronics has gained recognition as a prominent supplier of SCS112AGC Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. SCS112AGC Schottky Diodes & Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

SCS112AGC ROHM

SCS112AGC electronic component of ROHM
SCS112AGC ROHM
SCS112AGC Schottky Diodes & Rectifiers
SCS112AGC  Semiconductors

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See Product Specifications
Part No. SCS112AGC
Manufacturer: ROHM
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers SiC Schottky Barrier Diode; 600V, 12A
Datasheet: SCS112AGC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.5049 ea
Line Total: USD 14.5 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 1000
1 : USD 29.2221
5 : USD 22.767
20 : USD 14.2808
60 : USD 10.2433

0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 14.5049
2 : USD 9.486
5 : USD 8.9736

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCS112AGC from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCS112AGC and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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SiC Schottky Barrier Diode SCS106AG Applications Dimensions (Unit : mm) Structure Switching power supply Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type ROHM : O-220AC Absolute maximum ratings (Tj=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 600 V RM Reverse voltage (DC) V 600 V R 1 Continuous forward current I A F 6* 2 21* A I Surge no repetitive forward current FSM 3 86* A 4 Repetitive peak forward current I A 29* FRM 5 Total power disspation P W D 65* Junction temperature 175 Tj C Range of storage temperature 55 to 175 Tstg C 2.3 Junction to case Rth(j-c) C / W (*1)Tc=143C (*2)PW=8.3ms sinusoidal,Tj=25C (*3)PW=10 s square,Tj=25C (*4)Tc=100C,Tj=150C,Duty cycle=10% (*5)Tc=25C Electrical characteristics (Tj=25C) Parameter Conditions Symbol Min. Typ. Max. Unit DC blocking voltage V 600 - - V I =0.12mA DC R -1.5 1.7 V I =6A,Tj=25C F V Forward voltage F -1.82 - V I =6A,Tj=175C F - 1.2 120 AV =600V,Tj=25C R I Reverse current R -24 - AV =600V,Tj=175C R - 260 - pF V =1V,f=1MHz R Total capacitance C -28 - pF V =600V,f=1MHz R Total capacitive charge Qc - 12 - nC V =400V,di/dt=230A/s R V =400V,di/dt=230A/s Switching time tc - 18 - ns R www.rohm.com 1/3 2012.04 - Rev.B 2012 ROHM Co., Ltd. All rights reserved.DataSheet SCS106AG Electrical characteristic curves (Ta=25 C) Fig.1 V -I Characteristics F F Fig.2 V -I Characteristics F F 100 10 Ta=-25 pulsed pulsed 9 Ta= 25 10 8 7 Ta= 175 1 6 Ta= 125 Ta= 25 Ta= 175 5 Ta= 75 0.1 4 Ta=-25 3 Ta= 125 0.01 2 1 Ta= 75 0.001 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 FORWARD VOLTAGE : V (V) F FORWARD VOLTAGE : V (V) F Fig.3 V -I Characteristics R R Fig.4 V -Ct Characteristics R 1,000 100 Ta= 175 Ta= 125 10 Ta= 75 100 Ta= 25 1 0.1 10 Ta=-25 0.01 Ta=25 f=1MHz 0.001 1 0 200 400 600 0.01 0.1 1 10 100 1000 REVERSE VOLTAGE: V (V) R REVERSE VOLTAGE : V V R Fig.5 Thermal Resistance vs Pulse Width Fig.6 Power Dissipation 70 10 Ta=25 Single Pulse 60 50 1 40 30 0.1 20 10 0.01 0 0 25 50 75 100 125 150 175 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width Pw s CASE TEMPERATURE : Tc ( ) www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.04 - Rev.B 2/3 REVERSE CURRENT ( A) FORWARD CURRENT: I (A) F Thermal Resistance : /W CAPACITANCE BETWEEN TERMINALS : Ct pF Power Dissipation (W) FORWARD CURRENT: I (A) F

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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