TSM2305 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate V (V) R (m) I (A) DS DS(on) D 2. Source 3. Drain 55 V =-4.5V -3.2 GS 80 V =-2.5V -2.7 GS -20 130 V =-1.8V -2.0 GS Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Battery Management High Speed Switch Ordering Information Part No. Package Packing TSM2305CX RFG SOT-23 3Kpcs / 7 Reel Note: G denotes Halogen Free Product. P-Channel MOSFET Absolute Maximum Rating (T =25C unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V -20 V DS Gate-Source Voltage V 8 V GS Continuous Drain Current I -3.2 A D Pulsed Drain Current I -10 A DM a,b Continuous Source Current (Diode Conduction) I -1 A S T =25C 1.25 A Maximum Power Dissipation P W D T =75C 0.8 A Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance R 80 C/W JC Junction to Ambient Thermal Resistance (PCB mounted) R 150 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature 2 b. Surface Mounted on a 1 in pad of 2oz Cu, t 10 sec. Document Number: DS P0000046 1 Version: E15 TSM2305 20V P-Channel MOSFET Electrical Specifications (Ta = 25C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV -20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V -0.45 -0.7 -1 V DS GS D GS(TH) Gate Body Leakage V = 8V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = -16V, V = 0V I -- -- 1.0 A DS GS DSS V = -4.5V, I = -3.2A -- 44 55 GS D Drain-Source On-State Resistance V = -2.5V, I = -2.7A R -- 65 80 m GS D DS(ON) V = -1.8V, I = -2.0A -- 90 130 GS D Diode Forward Voltage I = -1A, V = 0V V -- -0.8 -1.3 V S GS SD b Dynamic Gate Resistance V = V =0V, f=1MHz R -- 10 -- GS DS g Total Gate Charge Q -- 10 20 g V = -10V, I = -3.2A, DS D nC Gate-Source Charge Q -- 0.7 -- gs V = -4.5V GS Gate-Drain Charge Q -- 4 -- gd Input Capacitance C -- 990 -- iss V = -10V, V = 0V, DS GS pF Output Capacitance C -- 125 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 100 -- rss b.c Switching Turn-On Delay Time t -- 12 24 d(on) V = -10V, R = 15, DD L Turn-On Rise Time t -- 23 50 r I = -1A, V = -4.5V, nS D GEN Turn-Off Delay Time t -- 50 100 d(off) R = 6 G Turn-Off Fall Time t -- 18 35 f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Document Number: DS P0000046 2 Version: E15