TSM2311 20V P-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate V (V) R (m) I (A) 2. Source DS DS(on) D 3. Drain 55 V = -4.5V -4.0 GS -20 85 V = -2.5V -2.5 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Information Part No. Package Packing TSM2311CX RF SOT-23 3Kpcs / 7 Reel TSM2311CX RFG SOT-23 3Kpcs / 7 Reel Note: G denotes Halogen Free Product. o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V -20 V DS Gate-Source Voltage V 8 V GS Continuous Drain Current, V 4.5V. I -4 A GS D Pulsed Drain Current, V 4.5V I -20 A GS DM a,b Continuous Source Current (Diode Conduction) I -0.72 A S o Ta = 25 C 0.9 Maximum Power Dissipation P W D o Ta = 75 C 0.57 o Operating Junction Temperature T +150 C J o Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8 from case) T 5 S L o Junction to Ambient Thermal Resistance (PCB mounted) R 250 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 5 sec. c. Surface Mounted on FR4 Board, 1/6 Version: B11 TSM2311 20V P-Channel MOSFET o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = -250uA BV -20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = -250A V -0.6 -- -1.4 V DS GS D GS(TH) Gate Body Leakage V = 8V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = -16V, V = 0V I -- -- -1.0 A DS GS DSS a On-State Drain Current V -10V, V = -5V I -6 -- -- A DS GS D(ON) Drain-Source On-State V = -4.5V, I = -4A -- 45 55 GS D R m DS(ON) a Resistance V = -2.5V, I = -2.5A -- 75 85 GS D a Forward Transconductance V = -5V, I = -4A g -- 9 -- S DS D fs Diode Forward Voltage I = -0.75A, V = 0V V -- - 0.8 -1.2 V S GS SD b Dynamic Total Gate Charge Q -- 6 9 g V = -6V, I = -4A, DS D nC Gate-Source Charge Q -- 1.4 -- gs V = -4.5V GS Gate-Drain Charge Q -- 1.9 -- gd Input Capacitance C -- 640 -- iss V = -6V, V = 0V, DS GS pF Output Capacitance C -- 180 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 90 -- rss c Switching Turn-On Delay Time t -- 22 35 d(on) V = -6V, R = 6, DD L Turn-On Rise Time t -- 35 55 r I = -1A, V = -4.5V, nS D GEN Turn-Off Delay Time t -- 45 70 d(off) R = 6 G Turn-Off Fall Time t -- 25 50 f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 Version: B11