TSM2323 20V P-Channel MOSFET SOT-23 PRO DUCT SUMMA RY Pin Definition: V (V) R (m) I (A) DS DS(on) D 1. Gate 2. Source 39 V = -4.5V -4.7 GS 3. Drain -20 52 V = -2.5V -4.1 GS 68 V = -1.8V -2.0 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Ordering Information Part No. Package Packing TSM2323CX RF SOT-23 3Kpcs / 7 Reel TSM2323CX RFG SOT-23 3Kpcs / 7 Reel Note: G denote for Green Product o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit V -20 V Drain-Source Voltage DS V 8 V Gate-Source Voltage GS I -4.7 A Continuous Drain Current, V 4.5V. D GS I -20 A Pulsed Drain Current, V 4.5V DM GS a,b I -1.0 A Continuous Source Current (Diode Conduction) S o 1.25 Ta = 25 C P W Maximum Power Dissipation D o 0.8 Ta = 70 C o C T +150 Operating Junction Temperature J o T , T - 55 to +150 C Operating Junction and Storage Temperature Range J STG Thermal Performance Parameter Symbol Limit Unit o Junction to Case Thermal Resistance R 75 C/W JC o Junction to Ambient Thermal Resistance (PCB mounted) R 120 C/W JA Notes: a. Surface Mounted on 1 x 1 FR4 Board. b. Pulse width limited by maximum junction temperature 1/6 Version: E10 TSM2323 20V P-Channel MOSFET Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = - 250uA BV -20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = - 250uA V -0.4 -- -1.0 V DS GS D GS(TH) Zero Gate Voltage Drain Current V = -16V, V = 0V I -- -- -1.0 uA DS GS DSS Gate Body Leakage V = 8V, V = 0V I -- -- 100 nA GS DS GSS On-State Drain Current V -5V, V = -4.5V I -20 -- -- A DS GS D(ON) V = -4.5V, I = -4.7A -- 31 39 GS D Drain-Source On-State Resistance V = -2.5V, I = -4.1A R -- 41 52 m GS D DS(ON) V = -1.8V, I = -2.0A -- 54 68 GS D Forward Transconductance V = - 5V, I = - 4.7A g -- 16 -- S DS D fs Diode Forward Voltage I = - 1.0A, V = 0V V -- - 0.7 -1.2 V S GS SD b Dynamic Total Gate Charge Q -- 12.5 19 g V = -10V, I = -4.7A, DS D nC Gate-Source Charge Q -- 1.7 -- gs V = -4.5V GS Gate-Drain Charge Q -- 3.3 -- gd Input Capacitance C -- 1020 -- iss V = -10V, V = 0V, DS GS pF Output Capacitance C -- 191 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 140 -- rss b,C Switching Turn-On Delay Time t -- 25 40 d(on) V = -10V, R = 10, DD L Turn-On Rise Time t -- 43 65 r I = -1A, V = -4.5V, nS D GEN Turn-Off Delay Time t -- 71 110 d(off) R = 6 G Turn-Off Fall Time t -- 48 75 f Notes: a. pulse test: PW 300S, duty cycle 2% b. Guaranteed by design of component. c. Switching time is essentially independent of operating temperature. 2/6 Version: E10