NDF06N60Z Power MOSFET, N-Channel, 600 V, 1.2 Features Low ON Resistance www.onsemi.com Low Gate Charge ESD DiodeProtected Gate 100% Avalanche Tested V ( T )R (MAX) 3 A DSS Jmax DS(ON) These Devices are PbFree, Halogen Free/BFR Free and are RoHS 650 V 1.2 Compliant ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit NChannel DraintoSource Voltage V 600 V DSS D (2) Continuous Drain Current, R (Note 1) I 7.1 A JC D Continuous Drain Current I 4.5 A D T = 100C, R (Note 1) A JC Pulsed Drain Current, I 28 A DM G (1) V 10 V GS Power Dissipation, R P 35 W JC D GatetoSource Voltage V 30 V GS S (3) Single Pulse Avalanche Energy, L = 6.3 mH, E 113 mJ AS I = 6.0 A D ESD (HBM) (JESD22A114) V 3000 V esd RMS Isolation Voltage V 4500 V ISO (t = 0.3 sec., R.H. 30%, T = 25C) (Figure 13) A Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns 1 2 Continuous Source Current (Body Diode) I 6.0 A S 3 Maximum Temperature for Soldering Leads T 260 C L NDF06N60ZG, NDF06N60ZH Operating Junction and T , T 55 to C J stg TO220FP Storage Temperature Range 150 CASE 221AH Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING AND MARKING INFORMATION 1. Limited by maximum junction temperature See detailed ordering, marking and shipping information on 2. I = 6.0 A, di/dt 100 A/ s, V BV , T = +150C SD DD DSS J page 6 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 8 NDF06N60Z/DNDF06N60Z THERMAL RESISTANCE Parameter Symbol Value Unit JunctiontoCase (Drain) R 3.6 C/W JC JunctiontoAmbient Steady State (Note 3) R 50 JA 3. Insertion mounted ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 600 V GS D DSS Breakdown Voltage Temperature Co- Reference to 25C, 0.6 V/C BV / DSS efficient I = 1 mA T D J DraintoSource Leakage Current 25C I 1 A DSS V = 600 V, V = 0 V DS GS 150C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 4) Static DraintoSource V = 10 V, I = 3.0 A R 0.98 1.2 GS D DS(on) OnResistance Gate Threshold Voltage V 3.0 3.9 4.5 V V = V , I = 100 A DS GS D GS(th) Forward Transconductance V = 15 V, I = 3.0 A g 5.0 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) C 738 923 1107 pF iss Output Capacitance (Note 5) V = 25 V, V = 0 V, C 90 106 125 oss DS GS f = 1.0 MHz Reverse Transfer Capacitance C 15 23 30 rss (Note 5) Total Gate Charge (Note 5) Q 15.5 31 47 nC g GatetoSource Charge (Note 5) Q 3 6.3 9.5 gs V = 300 V, I = 6.0 A, DD D GatetoDrain (Miller) Charge Q 8 17 24.5 gd V = 10 V GS (Note 5) Plateau Voltage V 6.4 V GP Gate Resistance R 3.2 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 13 ns d(on) Rise Time t 17 r V = 300 V, I = 6.0 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 30 d(off) Fall Time t 28 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 6.0 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 338 ns rr V = 0 V, V = 30 V GS DD I = 6.0 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 2.0 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Width 380 s, Duty Cycle 2%. 5. Guaranteed by design. www.onsemi.com 2