STW57N65M5 STMicroelectronics

STW57N65M5, STWA57N65M5 N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes V T R max I DS Jmax DS(on) D STW57N65M5 710 V 0.063 42 A STWA57N65M5 Worldwide best R *area amongst the 3 DS(on) 2 silicon based devices 1 TO-247 Higher V rating, high dv/dt capability DSS TO-247 long leads Excellent switching performance Easy to drive, 100% avalanche tested Applications Figure 1. Internal schematic diagram Switching applications Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is * combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- 6 based Power MOSFETs, making it especially suitable for applications which require superior 0 Y power density and outstanding efficiency. Table 1. Device summary Order codes Marking Packages Packaging STW57N65M5 TO-247 57N65M5 Tube STWA57N65M5 TO-247 long leads December 2013 DocID024050 Rev 2 1/16 This is information on a product in full production. www.st.comContents STW57N65M5, STWA57N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 DocID024050 Rev 2