STW62NM60N STMicroelectronics

STW62NM60N N-channel 600 V, 0.04 typ., 65 A, MDmesh II Power MOSFET in a TO-247 package Datasheet production data Features R DS(on) Order code V I DS D max STW62NM60N 600 V 0.049 65 A 100% avalanche tested 3 Low input capacitance and gate charge 2 1 Low gate input resistance TO-247 Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order code Marking Package Packaging STW62NM60N 62NM60N TO-247 Tube December 2012 Doc ID 018945 Rev 3 1/13 This is information on a product in full production. www.st.com 13Contents STW62NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 018945 Rev 3