STW69N65M5-4 STMicroelectronics

STW69N65M5-4 N-channel 650 V, 0.037 typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet - production data Features R DS(on) Order code V T I DS Jmax D max STW69N65M5-4 710 V 0.045 58 A Higher V rating DS 4 3 Higher dv/dt capability 2 1 Excellent switching performance thanks to the extra driving source pin TO247-4 Easy to drive 100% avalanche tested Figure 1. Internal schematic diagram Applications Drain(1) High efficiency switching applications: Servers PV inverters Telecom infrastructure Multi kW battery chargers Gate(4) Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined Driver Power with STMicroelectronics well-known source(3) source(2) AM10177v1 PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order code Marking Package Packaging STW69N65M5-4 69N65M5 TO247-4 Tube January 2014 DocID024925 Rev 2 1/13 This is information on a product in full production. www.st.comContents STW69N65M5-4 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 13 2/13 DocID024925 Rev 2