X-On Electronics has gained recognition as a prominent supplier of STW70N60DM2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW70N60DM2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW70N60DM2 STMicroelectronics

STW70N60DM2 electronic component of STMicroelectronics
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Part No.STW70N60DM2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; 446W; TO247
Datasheet: STW70N60DM2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.8306 ea
Line Total: USD 6.83 
Availability - 490
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
490
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 6.8306
10 : USD 5.8698
30 : USD 5.2853
100 : USD 4.7939

29
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 16.198
2 : USD 12.39
4 : USD 11.718
510 : USD 11.256

570
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 17.9327
10 : USD 16.4958
25 : USD 15.6025
50 : USD 14.7221
100 : USD 12.5185
1000 : USD 12.3906

46
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 8
Multiples : 1
8 : USD 12.7538
25 : USD 12.165

   
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Power Dissipation
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We are delighted to provide the STW70N60DM2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW70N60DM2 and other electronic components in the MOSFETs category and beyond.

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STW70N60DM2 Datasheet N-channel 600 V, 37 m typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Features V R max. I P Order code DS DS(on) D TOT STW70N60DM2 600 V 42 m 66 A 446 W Fast-recovery body diode 3 Extremely low gate charge and input capacitance 2 1 Low on-resistance 100% avalanche tested TO-247 Extremely high dv/dt ruggedness Zener-protected D(2, TAB) Applications Switching applications G(1) Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- S(3) AM01475V1 recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STW70N60DM2 Product summary Order code STW70N60DM2 Marking 70N60DM2 Package TO-247 Packing Tube DS10558 - Rev 5 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW70N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 66 case I A D Drain current (continuous) at T = 100 C 42 case (1) I Drain current (pulsed) 264 A DM P Total power dissipation at T = 25 C 446 W TOT case (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 66 A, di/dt=900 A/s V peak < V , V = 400 V. SD DS (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.28 thj-case C/W R Thermal resistance junction-ambient 50 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 10 A AR (2) E Single pulse avalanche energy 1500 mJ AS 1. Pulse width limited by T . JMAX 2. Starting T = 25 C, I = I , V = 50 V J D AR DD DS10558 - Rev 5 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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