SUD40N10-25 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) DS DS(on) D Available 175 C Maximum Junction Temperature 0.025 at V = 10 V 40 GS RoHS* 100 100 % R Tested g 0.028 at V = 4.5 V 38 COMPLIANT GS T O-252 D G Drain Connected to T a b GD S T op V i e w S Ordering Information: SUD40N10-25 SUD40N10-25-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V V Gate-Source Voltage 20 GS T = 25 C 40 C b I Continuous Drain Current (T = 175 C) D J T = 125 C 23 C I Pulsed Drain Current 70 A DM I Continuous Source Current (Diode Conduction) 40 S I Avalanche Current 40 AS Single Pulse Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH E 80 mJ AS b T = 25 C 136 C Maximum Power Dissipation P W D a T = 25 C 3 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 15 18 a R Junction-to-Ambient thJA Steady State 40 50 C/W Junction-to-Case R 0.85 1.1 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71140 www.vishay.com S-81732-Rev. E, 04-Aug-08 1SUD40N10-25 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 DS GS D V V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I V = 100 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 100 V, V = 0 V, T = 175 C 250 DS GS J b I V = 5 V, V = 10 V 70 A On-State Drain Current D(on) DS GS V = 10 V, I = 40 A 0.02 0.025 GS D V = 10 V, I = 40 A, T = 125 C 0.05 GS D J b R Drain-Source On-State Resistance DS(on) V = 10 V, I = 40 A, T = 175 C 0.063 GS D J V = 4.5 V, I = 20 A 0.022 0.028 GS D b g V = 15 V, I = 40 A 70 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 2400 iss C V = 0 V, V = 25 V, F = 1 MHz Output Capacitance 290 pF oss GS DS C Reverse Transfer Capacitance 120 rss c Q 40 60 Total Gate Charge g c Q V = 50 V, V = 10 V, I = 40 A Gate-Source Charge 11 nC gs DS GS D c Q 9 Gate-Drain Charge gd R Gate Resistance 13.5 g c t 813 Turn-On Delay Time d(on) c t Rise Time V = 50 V, R = 1.25 40 60 r DD L ns c 40 A, V = 10 V, R = 2.5 I t 15 25 Turn-Off Delay Time d(off) D GEN g c t Fall Time 80 120 f Source-Drain Diode Ratings and Characteristics T = 25 C C I Pulsed Current 70 A SM b V I = 40 A, V = 0 V Diode Forward Voltage 1.0 1.5 V SD F GS t I = 40 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 75 120 ns rr F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71140 2 S-81732-Rev. E, 04-Aug-08