SUD50N03-06AP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET a, e V (V) r ( ) I (A) Q (Typ) DS D g DS(on) Optimized for LowSide Synchronous Rectifier Operation 0.0057 V = 10 V 90 RoHS GS 3030 3030 100% R Tested g 0.0078 V = 4.5 V 77 GS DC/DC Converters Synchronous Rectifiers TO-252 D G Drain Connected to Tab GD S Top View S Ordering Information: SUD50N03-06APE3 (Lead (Pb)-free) N-Channel MOSFET Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS VV Gate-Source Voltage V 20 GS a, e T = 25 C 90 C a, e T = 70 C 75 C ContinuousContinuous Drain CurrentDrain Current (T(T = 175175 C)C) II J D b, c T = 25 C 30 A b, c T = 70 C 25 A AA Pulsed Drain Current I 100 DM a, e T = 25 C 55 C Continuous Source Drain Diode Current I Continuous Source-Drain Diode Current I S b, c T = 25 C 6.7 A Avalanche Current Pulse I 45 AS L = 0.1 mHL 01mH Single Pulse Avalanche Energy E 101 mJ AS T = 25 C 83 C T = 70 C 58 C Maximum Power DissipationMaximum Power Dissipation PP WW D b, c T = 25 C 10 A b, c T = 70 C 7 A Operating Junction and Storage Temperature Range T , T 55 to 175 C J stg Parameter Symbol Typical Maximum Unit b, d Maximum Junction-to-Ambient R 12 15 t 10 sec thJA C/WC/W Maximum Junction-to-Case Steady State R 1.5 1.8 thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 50 C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. Document Number: 73540 www.vishay.com S52237Rev. A, 24-Oct-05 1SUD50N03-06AP New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 25 DS DS J II = 250 = 250 AA mV/mV/ CC D V Temperature Coefficient V /T 6.3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.2 2.4 V DS GS D GS(th) Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II A A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I 50 A V 5 V, V = 10 V D(on) DS GS 0.0046 0.0057 V = 10 V, I = 20 A GS D aa DDrainrain--SSourceource OnOn--StateState ResistanceResistance rr DS(on)DS(on) V = 4.5 V, I = 20 A 0.0062 0.0078 GS D a Forward Transconductance g V = 15 V, I = 30 A 70 S fs DS D b Dynamic Input Capacitance C 3800 iss pFp Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 615 oss DS GS Reverse Transfer Capacitance C 305 rss V = 15 V, V = 10 V, I = 30 A 62 95 DS GS D TTotalotal Gate ChargeGate Charge QQ g 30 45 nCnC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 25 A 11 gs DS GS D Gate-Drain Charge Q 9 gd Gate Resistance R f = 1 MHz 0.9 1.4 g Turn-On Delay Time t 12 18 d(on) Rise Time t 10 15 r VV = 15 V = 15 V, , RR = 0.5= 0.5 DDDD LL I 30 A, V = 10 V, R = 1 D GEN gg Turn-Off Delay Time t 30 45 d(off) Fall Time t 8 12 f nsns Turn-On Delay Time t 26 40 d(on) Rise Time t 230 345 r VV = 15 V= 15 V, , RR == 00.6.6 DDDD LL I 25 A, V = 4.5 V, R = 1 D GEN gg Turn-Off Delay Time t 25 40 d(off) Fall Time t 9 14 f Drain-Source Body Diode Characteristics c T = 25 C Continuous Source-Drain Diode Current I 55 S C AA a Pulse Diode Forward Current I 100 SM I = 6.7 A Body Diode Voltage V 0.9 1.5 V SD S Body Diode Reverse Recovery Time t 65 100 ns rr Body Diode Reverse Recovery Charge Q 38 60 nC rr II = 6.7 A, di/dt = 100 A/6 7 A di/dt 100 A/ s, TsT = 2525 CC F J Reverse Recovery Fall Time t 50 a nsns Reverse Recovery Rise Time t 15 b Notes a. Pulse test pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Calculated based on maximum junction temperature. Package limitation current is 50 A. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73540 www.vishay.com S52237Rev. A, 24-Oct-05 2