SUM110N06-3m9H Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ()I (A) Q (Typ) (BR)DSS DS(on) D g 175 C Junction Temperature a RoHS 60 0.0039 at V = 10 V 200 110 GS COMPLIANT Low Thermal Resistance Package High Threshold Voltage At High Temperature 100 % R Tested g D TO-263 G G D S Top View S Ordering Information: SUM110N06-3m9H-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit V Drain-Source Voltage 60 DS V V Gate-Source Voltage 20 GS a T = 25 C C 110 I Continuous Drain Current (T = 175 C) D J a T = 125 C C 110 A I Pulsed Drain Current 440 DM Single Pulse Avalanche Current I 70 AS L = 0.1 mH E Single Pulse Avalanche Energy 245 mJ AS c T = 25 C C 375 b P W Maximum Power Dissipation D d 3.75 T = 25 C A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol LimitUnit d R Junction-to-Ambient 40 PCB Mount thJA C/W R Junction-to-Case (Drain) 0.4 thJC Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve for voltage derating. d. When mounted on 1 square PCB (FR-4 material). Document Number: 73236 www.vishay.com S-70534-Rev. C, 26-Mar-07 1SUM110N06-3m9H Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min TypMaxUnit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 (BR)DSS GS D V V V = V , I = 250 A Gate-Threshold Voltage 3.4 4.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS I V = 60 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 60 V, V = 0 V, T = 175 C 250 DS GS J a I V 5 V, V = 10 V 120 A On-State Drain Current D(on) DS GS V = 10 V, I = 30 A 0.00325 0.0039 GS D a r V = 10 V, I = 30 A, T = 125 C 0.0063 Drain-Source On-State Resistance DS(on) GS D J V = 10 V, I = 30 A, T = 175 C 0.0082 GS D J a g V = 15 V, I = 30 A Forward Transconductance 30 S fs DS D b Dynamic Input Capacitance C 15 800 iss C V = 0 V, V = 25 V, f = 1 MHz Output Capacitance 1050 pF oss GS DS Reverse Transfer Capacitance C 600 rss Gate Resistance R f = 1 MHz 0.6 1.2 1.8 g c Q 200 300 Total Gate Charge g c Q V = 30 V, V = 10 V, I = 110 A Gate-Source Charge 80 nC gs DS GS D c Q 45 Gate-Drain Charge gd c t Turn-On Delay Time 45 70 d(on) c t V = 30 V, R = 0.27 160 240 Rise Time r DD L ns c I 110 A, V = 10 V, R = 2.5 t Turn-Off Delay Time D GEN g 75 115 d(off) c t 14 25 Fall Time f b Source-Drain Diode Ratings and Characteristics (T = 25 C) C I Continuous Current 110 S A I Pulsed Current 240 SM a V I = 85 A, V = 0 V 1.1 1.5 V Forward Voltage SD F GS Reverse Recovery Time t 65 100 ns rr I I = 85 A, di/dt = 100 A/s Peak Reverse Recovery Current 4.4 6.6 A RM(REC) F Reverse Recovery Charge Q 143 330 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73236 2 S-70534-Rev. C, 26-Mar-07