SUM110P04-04L www.vishay.com Vishay Siliconix P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET d V (V) R ( )I (A) DS DS(on) D Low thermal resistance 0.0042 at V = -10 V -110 GS -40 Material categorization: 0.0062 at V = -4.5 V -110 GS For definitions of compliance please see www.vishay.com/doc 99912 TO-263 S G SS DD P-Channel MOSFET GG Top View D Ordering Information: SUM110P04-04L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -40 DS V Gate-Source Voltage V 20 GS T = 25 C -110 C d Continuous Drain Current (T = 175 C) I J D T = 125 C -110 C A Pulsed Drain Current I -240 DM Avalanche Current I -75 AS L = 0.1 mH a Single Pulse Avalanche Energy E 281 mJ AS c T = 25 C 375 C Power Dissipation P W D b T = 25 C 3.75 A Operating Junction and Storage Temperature Range T , T -55 to 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT b Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case R 0.4 thJC Notes a. Duty cycle 1 %. b. When mounted on 1 square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. S13-2478-Rev. D, 09-Dec-13 Document Number: 72437 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUM110P04-04L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -40 DS GS D V Gate Threshold Voltage V V = V , I = -250 A -1 -3 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = -40 V, V = 0 V -1 DS GS Zero Gate Voltage Drain Current I V = -40 V, V = 0 V, T = 125 C -50 A DSS DS GS J V = -40 V, V = 0 V, T = 175 C -250 DS GS J a On-State Drain Current I V = -5 V, V = -10 V -120 A D(on) DS GS V = -10 V, I = -30 A 0.0034 0.0042 GS D V = -10 V, I = -30 A, T = 125 C 0.0063 GS D J a Drain-Source On-State Resistance R DS(on) V = -10 V, I = -30 A, T = 175 C 0.0076 GS D J V = -4.5 V, I = -20 A 0.005 0.0062 GS D a Forward Transconductance g V = -15 V, I = -30 A 20 S fs DS D b Dynamic Input Capacitance C 11 200 iss Output Capacitance C V = 0 V, V = -25 V, f = 1 MHz 1650 pF oss GS DS Reverse Transfer Capacitance C 1200 rss c Total Gate Charge Q 235 350 g c Gate-Source Charge Q V = -20 V, V = -10 V, I = -110 A 45 nC gs DS GS D c Gate-Drain Charge Q 65 gd Gate Resistance R 3 g c Turn-On Delay Time t 25 40 d(on) c Rise Time t 30 45 r V = -20 V, R = 0.18 DD L ns c I -110 A, V = -10 V, R = 2.5 Turn-Off Delay Time t 190D GEN g 300 d(off) c Fall Time t 110 165 f b Source-Drain Diode Ratings and Characteristics (T = 25 C) C Continuous Current I -110 S A Pulsed Current I -240 SM a Forward Voltage V I = -85 A, V = 0 V -1 -1.5 V SD F GS Reverse Recovery Time t 65 100 ns rr Peak Reverse Recovery Current I I = -85 A, dI/dt = 100 A/s -3.7 -5.6 A RM(REC) F Reverse Recovery Charge Q 0.12 0.28 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2478-Rev. D, 09-Dec-13 Document Number: 72437 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000