SUD50P04-08 www.vishay.com Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) R ( )I (A) Q (TYP.) DS DS(on) D g 100 % R and UIS tested d g 0.0081 at V = -10 V -50 GS -40 60 d Material categorization: 0.0117 at V = -4.5 V -48 GS for definitions of compliance please see www.vishay.com/doc 99912 TOTO-252 APPLICATIONS S Drain connected to tab Power switch Load switch in high current applications G DC/DC converters S D G D Top View P-Channel MOSFET Ordering Information: SUD50P04-08-GE3 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V -40 DS V Gate-Source Voltage V 20 GS d T = 25 C -50 C Continuous Drain Current (T = 150 C) I J D d T = 70 C -50 C A Pulsed Drain Current I -100 DM Avalanche Current I -46 AS a Single Avalanche Energy L = 0.1 mH E 106 mJ AS b T = 25 C 73.5 C a Maximum Power Dissipation P W D c T = 25 C 2.5 A Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT c Junction-to-Ambient (PCB Mount) R 50 thJA C/W Junction-to-Case (Drain) R 1.7 thJC Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR-4 material). d. Package limited. S14-2535-Rev. B, 29-Dec-14 Document Number: 65594 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUD50P04-08 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -40 - - DS GS D V Gate Threshold Voltage V V = V , I = -250 A -1 - -2.5 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = -40 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I V = -40 V, V = 0 V, T = 125 C - - -50 A DSS DS GS J V = -40 V, V = 0 V, T = 150 C - - -250 DS GS J a On-State Drain Current I V -10 V, V = -10 V -50 - - A D(on) DS GS V = -10 V, I = -22 A - 0.0067 0.0081 GS D a Drain-Source On-State Resistance R DS(on) V = -4.5 V, I = -19 A - 0.0097 0.0117 GS D a Forward Transconductance g V = -15 V, I = -22 A - 45 - S fs DS D b Dynamic Input Capacitance C - 5380 - iss Output Capacitance C V = 0 V, V = -20 V, f = 1 MHz - 570 - pF oss GS DS Reverse Transfer Capacitance C - 500 - rss V = -20 V, V = -10 V, I = -20 A - 106 159 DS GS D c Total Gate Charge Q g -60 90 nC c Gate-Source Charge Q -22- gs V = -20 V, V = -4.5 V, I = -20 A DS GS D c Gate-Drain Charge Q -27- gd Gate Resistance R f = 1 MHz 0.4 1.8 3.6 g c Turn-On Delay Time t -15 23 d(on) c Rise Time t -12 18 r V = -20 V, R = 2 DD L ns c I -10 A, V = -10 V, R = 1 D GEN g Turn-Off Delay Time t -70 105 d(off) c Fall Time t -18 27 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Continuous Current I -- -50 S A Pulsed Current I -- -100 SM a Forward Voltage V I = -10 A, V = 0 V - -0.8 -1.5 V SD F GS Reverse Recovery Time trr -35 53 ns Peak Reverse Recovery Current I I = -10 A, dI/dt = 100 A/s --2 -3 A RM(REC) F Reverse Recovery Charge Q -33 50 nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-2535-Rev. B, 29-Dec-14 Document Number: 65594 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000