X-On Electronics has gained recognition as a prominent supplier of SUD50P04-15-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUD50P04-15-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUD50P04-15-E3 Vishay

SUD50P04-15-E3 electronic component of Vishay
SUD50P04-15-E3 Vishay
SUD50P04-15-E3 MOSFETs
SUD50P04-15-E3  Semiconductors

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See Product Specifications
Part No. SUD50P04-15-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 781-SUD50P04-08-GE3
Datasheet: SUD50P04-15-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2000
Multiples : 2000
2000 : USD 2.2868
N/A

Obsolete
0
MOQ : 2000
Multiples : 2000
2000 : USD 1.4297
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.4542
10 : USD 2.8707
100 : USD 2.2172
500 : USD 1.9488
1000 : USD 1.6104
2000 : USD 1.5054
4000 : USD 1.447
10000 : USD 1.3887
N/A

Obsolete
0
MOQ : 6
Multiples : 1
6 : USD 3.465
10 : USD 2.9532
25 : USD 2.9468
50 : USD 2.822
100 : USD 2.3457
250 : USD 2.3426
500 : USD 2.0875
1000 : USD 1.7578
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SUD50P04-15-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUD50P04-15-E3 and other electronic components in the MOSFETs category and beyond.

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SUD50P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S), 175 C MOSFET V (V) r ( ) I (A) DS DS(on) D 0.015 V = 10 V 50 GS 4040 0.023 V = 4.5 V 45 GS S TO-252 G Drain Connected to Tab GD S Top View Order Number: D SUD50P04-15 P-Channel MOSFET Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS VV Gate-Source Voltage V 20 GS T = 25 C 50 C bb Continuous Drain CurrentContinuous Drain Current II DD T = 100 C 40 C AAA Pulsed Drain Current I 150 DM Continuous Source Current (Diode Conduction) I 50 S b T = 25 C 100 C bb Maximum Power DissipationMaximum Power Dissipation PP WW DD a T = 25 C 3 A Operating Junction and Storage Temperature Range T , T 55 to 175 C J stg Parameter Symbol Typical Maximum Unit t 10 sec. 15 18 aa MMaximumaximum JJunctionunction--ttoo--AmbientAmbient RR thJthJAA Steady State 40 50 C/WC/W Maximum Junction-to-Case R 1.2 1.5 thJC Notes a. Surface Mounted on 1 x 1 FR4 Board. b. See SOA curve for voltage derating. Document Number: 71176 www.vishay.com FaxBack 408-970-5600 S-00830Rev. A, 24-Apr-00 1SUD50P04-15 New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 GS D (BR)DSS VV Gate Threshold Voltage V V = V , I = 250 A 1.0 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltageoltage DrainDrain CurrentCurrent II AA DSSDSS V = 40 V, V = 0 V, T = 125 C 50 DS GS J a On-State Drain Current I V = 5 V, V = 10 V 120 A D(on) DS GS V = 10 V, I = 30 A 0.012 0.015 GS D aa Drain-Source On-State ResistanceDiS OS R i r V = 10 V, I = 30 A, T = 125 C 0.024 DS(on) GS D J V = 4.5 V, I = 20 A 0.018 0.023 GS D a Forward Transconductance g V = 15 V, I = 30 A 20 S fs DS D b Dynamic Input Capacitance C 5400 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 640 pFF oss GS DS Reverse Transfer Capacitance C 300 rss c Total Gate Charge Q 85 130 g c Gate-Source Charge Q V2V = 20 V0V, VV = 10 V10V, II = 50 A50A 25 nCC gs DS GS D c Gate-Drain Charge Q 15 gd c Turn-On Delay Time t 15 25 d(on) c Rise Time t 380 580 r VV2 = 20 V0V,, RR = 0.4 04 DDDD LL nsns II5 50 A, V0AV = 10 V10V, RR = 2.5 25 c D GEN G Turn-Off Delay Time t 75 115 d(off) c Fall Time t 140 210 f Source-Drain Diode Ratings and Characteristic (T = 25 C) C Pulsed Current I 150 A SM a Diode Forward Voltage V I = 50 A, V = 0 V 1.2 1.5 V SD F GS Source-Drain Reverse Recovery Time t I = 50 A, di/dt = 100 A/ s 40 80 ns rr F Notes a. Pulse test pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Document Number: 71176 www.vishay.com FaxBack 408-970-5600 S-00830Rev. A, 24-Apr-00 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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