SUD50P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S), 175 C MOSFET V (V) r ( ) I (A) DS DS(on) D 0.015 V = 10 V 50 GS 4040 0.023 V = 4.5 V 45 GS S TO-252 G Drain Connected to Tab GD S Top View Order Number: D SUD50P04-15 P-Channel MOSFET Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS VV Gate-Source Voltage V 20 GS T = 25 C 50 C bb Continuous Drain CurrentContinuous Drain Current II DD T = 100 C 40 C AAA Pulsed Drain Current I 150 DM Continuous Source Current (Diode Conduction) I 50 S b T = 25 C 100 C bb Maximum Power DissipationMaximum Power Dissipation PP WW DD a T = 25 C 3 A Operating Junction and Storage Temperature Range T , T 55 to 175 C J stg Parameter Symbol Typical Maximum Unit t 10 sec. 15 18 aa MMaximumaximum JJunctionunction--ttoo--AmbientAmbient RR thJthJAA Steady State 40 50 C/WC/W Maximum Junction-to-Case R 1.2 1.5 thJC Notes a. Surface Mounted on 1 x 1 FR4 Board. b. See SOA curve for voltage derating. Document Number: 71176 www.vishay.com FaxBack 408-970-5600 S-00830Rev. A, 24-Apr-00 1SUD50P04-15 New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 GS D (BR)DSS VV Gate Threshold Voltage V V = V , I = 250 A 1.0 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltageoltage DrainDrain CurrentCurrent II AA DSSDSS V = 40 V, V = 0 V, T = 125 C 50 DS GS J a On-State Drain Current I V = 5 V, V = 10 V 120 A D(on) DS GS V = 10 V, I = 30 A 0.012 0.015 GS D aa Drain-Source On-State ResistanceDiS OS R i r V = 10 V, I = 30 A, T = 125 C 0.024 DS(on) GS D J V = 4.5 V, I = 20 A 0.018 0.023 GS D a Forward Transconductance g V = 15 V, I = 30 A 20 S fs DS D b Dynamic Input Capacitance C 5400 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 640 pFF oss GS DS Reverse Transfer Capacitance C 300 rss c Total Gate Charge Q 85 130 g c Gate-Source Charge Q V2V = 20 V0V, VV = 10 V10V, II = 50 A50A 25 nCC gs DS GS D c Gate-Drain Charge Q 15 gd c Turn-On Delay Time t 15 25 d(on) c Rise Time t 380 580 r VV2 = 20 V0V,, RR = 0.4 04 DDDD LL nsns II5 50 A, V0AV = 10 V10V, RR = 2.5 25 c D GEN G Turn-Off Delay Time t 75 115 d(off) c Fall Time t 140 210 f Source-Drain Diode Ratings and Characteristic (T = 25 C) C Pulsed Current I 150 A SM a Diode Forward Voltage V I = 50 A, V = 0 V 1.2 1.5 V SD F GS Source-Drain Reverse Recovery Time t I = 50 A, di/dt = 100 A/ s 40 80 ns rr F Notes a. Pulse test pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Document Number: 71176 www.vishay.com FaxBack 408-970-5600 S-00830Rev. A, 24-Apr-00 2