SUD50P06-15L Vishay Siliconix P-Channel 60 V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) DS DS(on) D 175 C Junction Temperature d 0.015 at V = - 10 V RoHS GS - 50 - 60 COMPLIANT Compliant to RoHS Directive 2002/95/EC 0.020 at V = - 4.5 V - 50 GS S TO-252 G Drain Connected to Tab GD S Top View D Ordering Information: SUD50P06-15L-E3 (Lead-(Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 60 DS V V Gate-Source Voltage 20 GS d T = 25 C C - 50 Continuous Drain Current (T = 175 C) I J D T = 125 C - 39 C A I Pulsed Drain Current - 80 DM I Avalanche Current - 50 AR a L = 0.1 mH E Repetitive Avalanche Energy 125 mJ AR c T = 25 C C 136 P Power Dissipation W D b, c T = 25 C A 3 T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 15 18 b R Junction-to-Ambient thJA Steady State 40 50 C/W R Junction-to-Case 0.82 1.1 thJC Notes: a. Duty cycle 1 %. b. When mounted on 1 square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. Document Number: 72250 www.vishay.com S10-2545-Rev. C, 08-Nov-10 1SUD50P06-15L Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 60 DS GS D V V V = V , I = - 250 A Gate Threshold Voltage - 1 - 3 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 48 V, V = 0 V - 1 DS GS I V = - 48 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current - 50 A DSS DS GS J V = - 48 V, V = 0 V, T = 175 C - 150 DS GS J a I V = -5 V, V = - 10 V On-State Drain Current - 50 A D(on) DS GS V = - 10 V, I = - 17 A 0.012 0.015 GS D V = - 10 V, I = - 50 A, T = 125 C 0.025 GS D J a R Drain-Source On-State Resistance DS(on) V = - 10 V, I = - 50 A, T = 175 C 0.030 GS D J V = - 4.5 V, I = - 14 A 0.020 GS D a g V = - 15 V, I = - 17 A 61 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4950 iss C V = 0 V, V = - 25 V, f = 1 MHz Output Capacitance 480 pF oss GS DS Reverse Transfer Capacitance C 405 rss c Q 110 165 Total Gate Charge g c Q V = - 30 V, V = - 10 V, I = - 50 A Gate-Source Charge 19 nC gs DS GS D c Q 28 Gate-Drain Charge gd c t Turn-On Delay Time 15 23 d(on) c t 70 105 Rise Time V = - 30 V, R = 0.6 r DD L ns c I - 50 A, V = - 10 V, R = 6 t D GEN G 175 260 Turn-Off Delay Time d(off) c t Fall Time 175 260 f b Source-Drain Diode Ratings and Characteristics (T = 25 C) C I Continuous Current - 50 S A Pulsed Current I - 80 SM a V I = - 50 A, V = 0 V 1.0 1.6 V Forward Voltage SD F GS t I = - 50 A, dI/dt = 100 A/s Reverse Recovery Time 45 70 ns rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72250 2 S10-2545-Rev. C, 08-Nov-10