NTMYS1D2N04CL MOSFET Power, Single, N-Channel 40 V, 1.1 m , 258 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D LFPAK4 Package, Industry Standard 1.1 m 10 V These Devices are PbFree and are RoHS Compliant 40 V 258 A 1.7 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D (5) DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 258 A D C Current R State JC G (4) T = 100C 182 (Notes 1, 3) C Power Dissipation T = 25C P 134 W C D R (Note 1) S (1,2,3) JC T = 100C 67 C NCHANNEL MOSFET Continuous Drain Steady T = 25C I 44 A A D Current R State JA T = 100C 31 (Notes 1, 2, 3) A MARKING Power Dissipation T = 25C P 3.9 W D A DIAGRAM R (Notes 1, 2) JA T = 100C 1.9 A D Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM 1D2N04 Operating Junction and Storage Temperature T , T 55 to C J stg CL Range +175 LFPAK4 AWLYW CASE 760AB Source Current (Body Diode) I 112 A S 1 Single Pulse DraintoSource Avalanche E 1359 mJ AS S SS G Energy (I = 21 A) L(pk) 1D2N04CL = Specific Device Code Lead Temperature for Soldering Purposes T 260 C L A = Assembly Location (1/8 from case for 10 s) WL = Wafer Lot Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be W = Work Week assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS ORDERING INFORMATION Parameter Symbol Value Unit See detailed ordering, marking and shipping information in the JunctiontoCase Steady State R 1.12 C/W package dimensions section on page 5 of this data sheet. JC JunctiontoAmbient Steady State (Note 2) R 39 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: June, 2019 Rev. 0 NTMYS1D2N04CL/DNTMYS1D2N04CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 20 mV/C (BR)DSS Temperature Coefficient T J Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 180 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.6 mV/C GS(TH) J DraintoSource On Resistance R V = 4.5 V I = 50 A 1.4 1.7 m DS(on) GS D V = 10 V I = 50 A 0.9 1.2 GS D Forward Transconductance g V =15 V, I = 50 A 285 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 6330 pF ISS Output Capacitance C 3000 V = 0 V, f = 1 MHz, V = 20 V OSS GS DS Reverse Transfer Capacitance C 118 RSS Total Gate Charge Q V = 4.5 V, V = 20 V I = 50 A 52 nC G(TOT) GS DS D Total Gate Charge Q 109 nC G(TOT) Threshold Gate Charge Q 9.0 G(TH) GatetoSource Charge Q 16 V = 10 V, V = 20 V I = 50 A GS GS DS D GatetoDrain Charge Q 20 GD Plateau Voltage V 2.9 V GP SWITCHING CHARACTERISTICS (Note 5) ns TurnOn Delay Time t 14 d(ON) Rise Time t 8.1 r V = 10 V, V = 32 V, GS DS I = 50 A, R = 2.5 D G TurnOff Delay Time t 79 d(OFF) Fall Time t 22 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.80 1.2 V SD J V = 0 V, GS I = 50 A S T = 125C 0.65 J Reverse Recovery Time t 70 ns RR Charge Time t 42 a V = 0 V, dIs/dt = 100 A/ s, GS I = 50 A S Discharge Time t 28 b Reverse Recovery Charge Q 107 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2