STU7N60DM2 STMicroelectronics

STU7N60DM2 N-channel 600 V, 0.78 typ., 6 A MDmesh DM2 Power MOSFET in an IPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT TAB STU7N60DM2 600 V 0.90 6 A 60 W Fast-recovery body diode 3 2 Extremely low gate charge and input 1 capacitance Low on-resistance 100% avalanche tested IPAK Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STU7N60DM2 7N60DM2 IPAK Tube June 2017 DocID030794 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STU7N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 IPAK package information ................................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID030794 Rev 1