STW240N10F7 STMicroelectronics

STW240N10F7 N-channel 100 V, 2.6 m typ., 180 A, STripFET F7 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) D STW240N10F7 100 V 3.0 m 180 A Among the lowest R on the market DS(on) Excellent FoM (figure of merit) 3 Low C /C ratio for EMI immunity rss iss 2 High avalanche ruggedness 1 Applications TO-247 Switching applications Description Figure 1: Internal schematic diagram This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced D(2, TAB) trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G(1) S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STW240N10F7 240N10F7 TO-247 Tube July 2016 DocID029396 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STW240N10F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-247 package information ............................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID029396 Rev 2