X-On Electronics has gained recognition as a prominent supplier of STW24N60M6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW24N60M6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW24N60M6 STMicroelectronics

STW24N60M6 electronic component of STMicroelectronics
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Part No.STW24N60M6
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-247 package
Datasheet: STW24N60M6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.2718 ea
Line Total: USD 5.27 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 600
Multiples : 1
600 : USD 2.6687
1000 : USD 2.6422
2000 : USD 2.6158
2500 : USD 2.5893
3000 : USD 2.5641
4000 : USD 2.4557
5000 : USD 2.4318
10000 : USD 2.4066
20000 : USD 2.389
50000 : USD 2.3108

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.2718
10 : USD 3.456
25 : USD 3.2616
100 : USD 2.8296
600 : USD 2.4084

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 4.1251
5 : USD 3.7179
6 : USD 2.8224
16 : USD 2.6595

   
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We are delighted to provide the STW24N60M6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW24N60M6 and other electronic components in the MOSFETs category and beyond.

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STW24N60M6 Datasheet N-channel 600 V, 162 m typ., 17 A, MDmesh M6 Power MOSFET in a TO-247 package Features Order code V R max. I DS DS(on) D STW24N60M6 600 V 190 m 17 A Reduced switching losses 3 Lower R per area vs previous generation DS(on) 2 1 Low gate input resistance 100% avalanche tested TO-247 Zener-protected D(2) Applications Switching applications LLC converters G(1) Boost PFC converters S(3) Description NG1D2S3Z The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly Product status link experience for maximum end-application efficiency. STW24N60M6 Product summary Order code STW24N60M6 Marking 24N60M6 Package TO-247 Packing Tube DS12730 - Rev 1 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW24N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 17 case I A D Drain current (continuous) at T = 100 C 10.7 case (1) I Drain current (pulsed) 52.5 A DM P Total dissipation at T = 25 C 130 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 17 A, di/dt = 400 A/s, V < V , V = 400 V SD DS (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.96 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive I 3.2 A AR (pulse width limited by T ) Jmax Single pulse avalanche energy E 250 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS12730 - Rev 1 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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